Mechanisms of Decoupling Graphene from Strong-Binding Substrates by Intercalation

这项资助的目标是通过建模和实验相结合的方法阐明石墨烯与各种衬底的电子相互作用以及底层生长解耦的生长过程。石墨烯是一种单层碳原子，即使在室温下也能在微米尺度上表现出无耗散的导电。为了实现石墨烯纳米器件的真正突破性进展，必须在绝缘衬底上生长大而无缺陷的石墨烯片。虽然石墨烯外延生长在碳化硅上对未来的纳米电子学特别有吸引力，但这种方法有一个严重的缺点。第一层石墨烯虽然易于均匀生长，但不导电；从电子学的角度来看，这一层根本不是石墨烯，而是一个“缓冲层”。在这个提议中，氧嵌入将被用作石墨烯与SiC表面去耦的一种手段。导致完全解耦的石墨烯层或缺陷/氧化石墨烯形成的条件不仅取决于原子尺度的过程，还取决于数百纳米距离上表面特征的相互作用。为了应对这一挑战，我们提出了一种多尺度方法，将原位表面表征的实验技术与原子尺度计算、寻找表面结构的随机方法和动力学蒙特卡罗方法相结合。如果成功，这项工作将带来一种生长大面积石墨烯的新方法，通过光刻图像化可用于制造低功耗纳米电子器件。我们提出的石墨烯解耦方法易于实现，可以在预制器件上进行，即金属触点到位，并且与传统的互补金属氧化物半导体工艺兼容；因此，这是半导体行业非常感兴趣的。这项资助将为研究生和本科生提供一个机会，让他们在领先的工业实验室进行实验工作，并发展先进的计算和建模技能。在建模方法方面取得的进展将包括在PI创建的课程中，以促进动手模拟经验。

The goal of this grant is to elucidate the electronic interaction of graphene with various substrates and the growth process of decoupling underlayer growth through a combined modeling and experimental approach. Graphene, a single-layer of carbon atoms, exhibits dissipation-free electric conduction over the scale of microns even at room temperature. To enable truly groundbreaking advances in graphene-based nanodevices, large and defect-free graphene sheets must be grown on insulating substrates. While graphene grown epitaxially on silicon carbide is particularly attractive for future nanoelectronics, this method has a serious drawback. The first graphene layer, while easy to grow uniformly, is nonconductive; from an electronic point of view, this layer is not graphene at all, but rather a "buffer layer." In this proposal, oxygen intercalation will be used as a means to decouple graphene from the SiC surface. Conditions that lead to a perfectly decoupled graphene layer or alternatively the formation of defective/oxidized graphene depend not only on atomic-scale processes, but also on interactions of surface features over distances of hundreds of nanometers. In order to address this challenge, we propose a multi-scale approach that combines experimental techniques for in situ surface characterization with atomic-scale calculations, stochastic methods for finding surface structures, and kinetic Monte Carlo methods.If successful, this work will lead to a novel approach to grow large area graphene, which through lithographic patterning can be used to fabricate low-power nanoelectronic devices. The method of decoupling graphene we propose is simple to implement, can be carried out on prefabricated devices i.e., with metal contacts in place, and is compatible with conventional complementary metal-oxide semiconductor processes; it is therefore of great interest to the semiconductor industry. The grant will provide an opportunity for graduate and undergraduate students to both carry out experimental work at a leading industrial lab and to develop advanced computational and modeling skills. The progress made in the modeling methods will be included in the courses that the PI has created to promote hands-on simulation experience.