Collaborative Research: Rational Design and Engineering of Atomically Thin Interfaces for Electronic Devices

金属和半导体之间的接触是现代电子学的基础。今天的场效应晶体管以相对较低的能源成本实现了高性能，这是通过数十年来对电接触的优化实现的，这使得器件可以微型化到纳米级。为了继续发展先进电子学，人们对新材料和新器件的探索主要集中在二维MoS2材料上。原子厚度自然变薄的2D半导体原则上可以提供更高的性能。虽然这些材料可以提供优势，但它们的实施受到了限制，因为缺乏一种有用的策略来与设备进行电接触。这笔赠款着眼于这些联系的根本性质。计算和实验相结合的方法将寻找新的接触材料和结构来克服这一技术障碍。将发现和展示新的接触策略，从而在这些新材料的使用方面取得进展。本科生将从事研究活动，吸引和发展未被充分代表的学生进入工作。这项研究试图对具有不同性质的二维(2D)材料之间形成的原子薄界面有一个基本的理解。二维材料的横向积分是一个尚未被系统研究的独特科学问题。新的原子结构将被识别，这是由于界面应力引起的变形以及当两种材料‘缝合’在一起时存在的新类型的缺陷。这项工作利用多尺度理论模型、详细的结构表征以及界面力学与场效应晶体管中电子输运的关联，研究了缺陷和在结构界面诱导的应变的作用。将开发一种迭代设计方法，利用理论模型预测所需的性质，在实验上实现2D材料的异质界面，并表征其原子结构。实验工作将为改进计算提供输入参数，而理论模型将选择重要的2D材料组合。这项资助开发了新的理论和实验方法，用于设计与关键2D材料的原子薄界面，并将其实施为电子系统的高性能电触点。2D半导体电触点的材料选择知识将使下一代高性能电子产品散热更少，从而产生更节能的设备，并且不需要复杂的热管理策略。这项工作将本科生纳入研究活动，吸引了代表人数不足的群体。

The contact between metals and semiconductors is the foundation of modern day electronics. The high performance at relatively low energy cost in today's field effect transistors is achieved by decades long optimization of electrical contacts that has allowed the miniaturization of the device down to nanoscale dimensions. The search for new materials and devices to continue the development of advanced electronic has focused on 2-dimensional (2D) materials such as MoS2. 2D semiconductors that are naturally atomically thin can in principle provide higher performance. While the materials can provide advantages, their implementation is limited by the lack of a useful strategy to make electrical contact to the device. This grant looks to the fundamental nature of these contacts. The combined computational and experimental approach will seek new contact materials and structures to overcome this technological barrier. New contact strategies will be discovered and demonstrated leading to advances in the use of these new materials. Undergraduates will be engaged in the research activities drawing upon and developing underrepresented students into the work. The research seeks to develop a fundamental understanding of atomically thin interfaces formed between two dimensional (2D) materials with disparate properties. The lateral integration of 2D materials is a unique scientific problem that has not been systematically investigated. Novel atomic structures will be identified that are due to deformation induced by interfacial stress as well as the presence of new types of defects when two materials are 'stitched' together. The work examines the role of defects and the strain induced at the structural interface using multi-scale theoretical models, detailed structural characterization, and correlation of mechanics of the interface with electronic transport in field effect transistors. An iterative design approach will be developed that utilizes theoretical models to predict desired properties, experimentally realize hetero-interfaces of 2D materials, and characterize their atomic structure. The experimental work will provide input parameters for refinement of calculations while theoretical models will down select important combinations of 2D materials. This grant develops new theoretical and experimental methods for designing atomically thin interfaces with key 2D materials and their implementation as high performance electrical contacts for electronic systems. The materials selection knowledge for electrical contacts for 2D semiconductors will enable the next generation of high performance electronics that dissipate less heat leading to more energy efficient devices and do not require sophisticated thermal management strategies. The work incorporates undergraduates into the research activities drawing from underrepresented groups.