CAREER: High Performance III-V-Bismide Mid-Infrared Semiconductor Lasers

摘要技术：这项职业计划将在III-V双胺器件这一新兴领域开启一个主要的研究方向。含有最重的天然存在的V族元素铋的III-V化合物半导体是一种相对未被探索的材料体系，预计将提供许多独特的光学和电学性能，适合于许多创新设备应用。本研究的重点是利用分子束外延(MBE)技术在GaSb衬底上生长(In)GaAsSbBi材料，研制高性能的中红外(3-4微米)I型量子阱(QW)激光器。分析表明，(In)GaAsSbBi基量子阱激光器可以很容易地获得3-4微米的发射，具有很大的实现高性能的潜力。该项目的系统研究计划将包括三项任务：i)III-V-Bi的分子束外延生长和材料表征，ii)红外激光器和中红外探测器/发射器的开发，以及iii)中红外激光器的开发；以及iii)中红外激光器的开发；以及与之配套的“联网”任务，这将有效地促进PI的学术事业的发展。该研究项目将通过开发新型(In)GaAsSbBi有源材料来解决GaSb基I类量子阱激光器的性能问题，这些材料提供：i)延长激光波长，ii)改善空穴限制，iii)抑制主要的俄歇损耗机制，v)避免InGaAsSb基化合物中的生长混溶间隙，以及vi)高可靠高功率应用的“准无铝”器件设计。材料工作的目的是通过开发表面分离的铋与III-V半导体合金化的技术，以及使用铋作为表面活性剂来提高阻挡层/覆层的质量，从而实现优异的器件性能。这项研究将建立在PI在光电材料和器件设计、生长、制造和表征领域的经验基础上。非技术：基于(In)GaAsSbBi材料系统的器件的成功开发将填补高性能半导体激光器的3-4微米空白，并使许多重要的中红外应用成为可能，如传感、通信、外科、光学集成和国土安全。该项目将为研究生提供先进光电子器件各方面的全面培训，以及本科生的大量参与。这项研究活动将通过与“铋材料世界网络”的密切合作，在促进教学、培训和学习的同时，促进发现和理解，为研究和教育开发网络工具。外展活动包括通过现有的大学项目和外展活动招募STEM代表性不足的学生，包括参加“绿色”团队，在HBCU进行高中教师和两年制大学教师培训，以及在光学和太阳能电池领域的教学实验室建设。

AbstractTechnical: This CAREER proposal will launch a major research direction in the emerging field area of III-V bismide devices. III-V compound semiconductors containing the heaviest naturally occurring group V element, Bismuth, is a relatively unexplored material system that is expected to offer many unique optical and electrical properties desirable for numerous innovative device applications. This research emphasizes the development of high performance Mid-IR (3-4 micron) type-I quantum well (QW) lasers using the (In)GaAsSbBi materials grown on GaSb substrates by molecular beam epitaxy (MBE). An analysis shows that (In)GaAsSbBi based QW lasers can easily obtain 3-4 micron emission and they have a great potential to achieve high performance. A systematic research plan for this project will be studied with three tasks: i) MBE growth of III-V-Bi and material characterization, ii) Development of infrared lasers and Mid-IR detectors/emitters, and iii) Development of Mid-IR lasers; which are complemented by a "Networking" task that will effectively promote the development of the PI's academic career. This research project will address performance issues in GaSb based type-I QW lasers through the development of novel (In)GaAsSbBi active materials that offer i) extended lasing wavelengths, ii) improved hole confinement, iii) the suppression of the dominant Auger loss mechanism, v) the avoidance of the growth miscibility gap in InGaAsSb based compounds, and vi) a "quasi-Al free" device design for highly reliable high power applications. The material work aims at superior device performance through the development of techniques to alloy Bi, which surface segregates, with III-V semiconductors, and to use Bi as a surfactant to improve the quality of barrier/cladding layers. The reserach will build on the PI's experiences in the areas of optoelectronic materials and device design, growth, fabrication, and characterization.Non Technical:The successful development of devices based on the (In)GaAsSbBi material system will fill the 3-4 micron gap in high performance semiconductor lasers and enable many important Mid-IR applications, such as sensing, communication, surgery, optical integration, and homeland security. This project will provide comprehensive training for graduate students in all aspects of advanced optoelectronic devices and as well heavy involvement of undergraduate students. This research activity will advance discovery and understanding while promoting teaching, training, and learning through strong collaborations with the "Bismuth Materials World Network" to develop cybertools for research and education. The outreach activities include the recruitment of STEM underrepresented students through existing university programs and outreach activities that include participation in the "Green" team to conduct high school teacher and two year college faculty training and instruction lab construction in HBCU in the areas of optics and solar cells.