Interfacial Electromagnetic Coupling in Multiferroic Tunnel Junctions
Interfacial Electromagnetic Coupling in Multiferroic Tunnel Junctions
批准号:
1207474
负责人:
Qi Li
金额:
$26.0万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2012
资助国家:
美国
项目状态:
已结题
起止时间:
2012-06-01 至 2015-04-30
中文摘要
该项目由材料研究部(DMR)的电子与光子材料项目(EPM)和陶瓷项目(CER)共同资助。技术描述:多铁隧道结是将磁性隧道结与铁电势垒结合在一起的一种极具潜力的低功耗、多层次、多功能器件。它们具有实现磁态电子控制的潜力,这对功能自旋电子器件至关重要。本项目旨在研究多铁性隧道结中界面磁电耦合效应和电场对磁态切换的机理。界面磁电耦合取决于界面上磁性层和铁电层的原子和化学结构。通过结合不同磁性和铁电氧化物异质结构的设计和控制生长,界面磁性状态的测量,以及器件的磁性和输运性质的测量,该项目旨在了解几种系统中界面磁电相互作用的机制。这些研究可能会导致磁电耦合的增强和新的器件概念。非技术描述:该项目解决了对下一代电子设备有潜在影响的材料科学挑战。通过结合非常薄的铁电绝缘体,一种具有自发电荷极化的材料,作为磁隧道结的屏障,已用于磁记录和传感器,可以实现新的功能。研究的成功对实现具有多个独立控制的多级多功能设备具有重要意义。该项目的教育目标是为研究生和本科生提供教育和培训机会,特别是为女性和少数民族本科生提供教育和培训机会,并为物理学,材料科学和工程领域的跨学科经验提供激励环境。PI在通过若干既定活动向女性和代表性不足群体提供咨询方面有多年经验。
英文摘要
This project is jointly funded by the Electronic and Photonic Materials Program (EPM) and Ceramics Program (CER) in the Division of Materials Research (DMR).Technical Description: Multiferroic tunnel junctions, which combine magnetic tunnel junctions with ferroelectric barriers, are potentially multilevel and multifunctional devices with low power consumptions. They have potential to realize electric control of magnetic states, which is critical for functional spintronic devices. This project aims to study the mechanisms of interfacial magnetoelectric coupling effect and the switching of the magnetic state by an electric field in multiferroic tunnel junctions. Interfacial magnetoelectric coupling depends on the atomic and chemical structures of both magnetic and the ferroelectric layers at the interfaces. By combining the design and controlled growth of heterostructures of different magnetic and ferroelectric oxides, measurements of the interfacial magnetic states, and measurements of magnetic and transport properties of the devices, the project seeks to understand the mechanisms of interfacial magnetoelectric interaction in several systems. These studies may lead to enhanced magnetoelectric coupling and new device concepts. Non-technical Description: The project addresses a materials science challenge which has potential impact on next generation of electronic devices. By combining a very thin ferroelectric insulator, a material with spontaneous charge polarization, as the barrier with magnetic tunnel junctions that have been used for magnetic recording and sensors, new functionalities can be achieved. Success of the research can have significant impacts on realizing multilevel multifunctional devices with multiple independent controls. The educational goals of the project are to provide educational and training opportunities for both graduate and undergraduate students, especially for female and underrepresented minority undergraduate students, with a stimulating environment for interdisciplinary experience in physics, materials sciences, and engineering. The PI has many years of experience in advising female and underrepresented groups through several established activities.
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