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CIF: Small: Collaborative Research: Coding for Green Storage Technologies in Nonvolatile Memories

CIF: Small: Collaborative Research: Coding for Green Storage Technologies in Nonvolatile Memories
CIF:小型:协作研究:非易失性存储器中的绿色存储技术编码
批准号:
1217944
负责人:
Anxiao Jiang
金额:
$22.29万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2012
资助国家:
美国
项目状态:
已结题
起止时间:
2012-09-01 至 2016-08-31

项目摘要

项目成果

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中文摘要
翻译
快速发展的现代非易失性存储器技术包括闪存和相变存储器作为两个最显著的代表。创建新的方案和架构以提高其能效以及写入速度、可靠性和存储器寿命至关重要。新方案应充分利用存储器技术的独特属性,包括单元编程模型、错误模型和耐久性模型。关键是通过将新的编码方案与这些存储技术的物理特性紧密结合,更灵活和鲁棒地控制单元状态。在本项目中,将基于非易失性存储器的编码理论开发一种新的绿色存储技术。重点将放在闪存和相变存储器,共享许多共同的特点。将研究一种新的方案,用于表示使用相对单元水平的数据,它优化了写入和纠错的能源效率。一种新的可变电平电池技术将被开发,以最大限度地提高存储容量。将设计新的纠错码来纠正特定于内存的错误。此外,将开发新的处理技术,以平衡高峰和非高峰时间的电力消耗。新的设计将被整合,形成一个全面的解决方案,其性能将被彻底分析。研究结果将有助于为基于非易失性存储器的高性能普适计算提供一个新的平台。
英文摘要
The fast-advancing modern nonvolatile memory technology includes flash memory and phase-change memory as the two most notable representatives. It is critical to create new schemes and architectures to improve their energy efficiency as well as their write speed, reliability and memory longevity. New schemes should fully utilize the unique properties of the memory technologies, including cell programming models, error models and endurance models. The key is to control cell states more flexibly and robustly by closely coupling novel coding schemes with the physics of these memory technologies.In this project, a novel green storage technology will be developed based on coding theory for nonvolatile memory. The focus will be on flash memory and phase-change memory that share many common features. A new scheme for representing data using relative cell levels will be studied; it optimizes the energy efficiency for both writing and error correction. A novel variable-level cell technology will be developed to maximize storage capacity. New error-correcting codes will be designed to correct memory-specific errors. In addition, new processing techniques will be developed to balance the power consumption at peak and non-peak times. The new designs will be integrated to form a comprehensive solution, and their performance will be analyzed thoroughly. The results will contribute to providing a new platform for high-performance ubiquitous computing based on nonvolatile memories.
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会议论文
CIF: Small: Collaborative Research: Error Correction with Natural Redundancy
Collaborative Research: BRAM: Balanced RAnk Modulation for data storage in next generation flash memories
CAREER: Information Storage in Flash Memories: From Devices to Networks
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海外基金
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