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SBIR Phase II: Batch Wafer-Scale Fabrication of Improved Probe Tips for Scanned Probe Microscopy

SBIR Phase II: Batch Wafer-Scale Fabrication of Improved Probe Tips for Scanned Probe Microscopy
SBIR 第二阶段:用于扫描探针显微镜的改进探针尖端的批量晶圆级制造
批准号:
1256510
负责人:
Scott Lockledge
金额:
$48.27万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2013
资助国家:
美国
项目状态:
已结题
起止时间:
2013-04-01 至 2018-09-30
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项目摘要

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中文摘要
翻译
这个小企业创新研究(SBIR)第二阶段项目将完善一种专有的批量加工技术,用于制造超硬和超尖锐的原子力显微镜(AFM)针尖。 新的过程包括两个步骤。 首先,使用化学气相沉积(CVD)来用化学惰性、高导电性和极硬的材料涂覆尖端。其次,我们开发的专利工艺,场定向溅射锐化(FDSS),将探针针尖锐化到原子尺寸(针尖顶点处的曲率半径为1- 4 nm)。 硬,锋利的针尖是相当大的科学和市场的兴趣,因为针尖的几何形状和机械性能显着影响AFM测量的结果。目前的项目将进行研究,以完善一批晶圆规模的工艺,能够一次制造数百个尖端。 为了将该技术推向市场,将开展以下研究和开发任务:(a)优化工艺条件以可再现地锐化在4英寸晶片上制造的AFM探针阵列,(B)研究用各种硬膜材料涂覆和锐化AFM探针的能力,以及(c)评估市场驱动的探针显微镜应用的批量制造探针尖端的性能。该项目的更广泛/商业影响来自于开发鲁棒的,可重复的,和耐用的尖端,更耐磨损(由于高硬度),并具有良好的AFM成像特性(小曲率半径,控制纵横比,导电)。该项目将有利于使用扫描探针显微镜成像的学术界和工业界。尽管AFM和相关的探针显微镜比电子显微镜具有许多优点(例如,它们可以在环境条件下使用,并且它们可以容易地与光谱学接口),一个显著的缺点是探针尖端由于使用期间的磨损而具有有限的寿命。开发和商业引进的探针尖是超尖锐的,非常硬,导电,相对便宜,将显着提高AFM和相关技术的能力,如扫描电容显微镜(SCM),微电子工业的极大兴趣的技术,因为它是有用的板上测试集成电路的延迟故障。这项研究也将有利于那些谁的图像绝缘表面,如聚合物和其他软材料的静电荷积累限制功效,以及那些开发多尖端探针阵列的光刻和纳米制造应用。
英文摘要
This Small Business Innovation Research (SBIR) Phase II project will perfect a proprietary batch-scale processing technique for fabricating ultrahard and ultrasharp atomic force microscopy (AFM) tips. The new process involves two steps. First, chemical vapor deposition (CVD) is used to coat the tips with a chemically inert, highly conductive, and extremely hard material. Second, a patented process that we have developed, field directed sputter sharpening (FDSS), sharpens the probe tip to atomic dimensions (1- 4 nm radius of curvature at the tip apex). Hard, sharp tips are of considerable scientific and market interest because tip geometry and mechanical properties significantly impact the results of AFM measurements. The current project will carry out research to perfect a batch wafer-scale process able to manufacture hundreds of tips at once. In order to bring the technique to market, the following research and development tasks will be carried out: (a) optimization of process conditions to reproducibly sharpen arrays of AFM probes fabricated on 4-inch wafers, (b) investigation of the ability to coat and sharpen AFM probes with a variety of hard film materials, and (c) assessment of the performance of batch-fabricated probe tips for market-driven probe microscopy applications.The broader/commercial impact of the project arises from the development of robust, reproducible, and durable tips that are more resistant to wear (due to the high hardness) and have favorable characteristics for AFM imaging (small radius of curvature, controlled aspect ratio, and electrically conductive). The project will benefit the academic and industrial communities who use scanning probe microscopy imaging. Although AFM and related probe microscopies have many advantages over electron microscopy (e.g., they can be used under ambient conditions and they can be easily interfaced with optical spectroscopy), one significant drawback is that the probe tips have limited lifetimes owing to wear during use. The development and commercial introduction of probe tips that are ultrasharp, very hard, conductive, and relatively inexpensive will significantly enhance the capabilities of AFM and related techniques such as scanning capacitance microscopy (SCM), a technique of great interest to the microelectronics industry because it is useful for the on-board testing of integrated circuits for delay faults. The research will also be of benefit to those who image insulating surfaces such as polymers and other soft materials where static charge build-up limits efficacy, and to those developing multi-tip probe arrays for lithographic and nanomanufacturing applications.
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SBIR Phase I: Batch Wafer-Scale Fabrication of Improved Probe Tips for Scanned Probe Microscopy
  • 批准号:
    1143116
  • 项目类别:
    Standard Grant
  • 资助金额:
    $15.0万
  • 财政年份:
    2012
  • 负责人:
    Scott Lockledge
  • 依托单位:
国内基金
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  • 资助金额:
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  • 负责人:
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地幔含水相Phase E的温度压力稳定区域与晶体结构研究
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  • 项目类别:
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  • 资助金额:
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  • 批准年份:
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  • 负责人:
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