IRES University of Texas IBM Zurich Collaboration: Modeling and Integration of Non-Linear Optics with Si Using Epitaxial Oxides

一个技术说明拟议的合作提出了一个联合研究的电光性能的钛酸钡（BTO）薄膜生长在硅上的一个小组在得克萨斯大学奥斯汀和小组在IBM苏黎世。拟议的合作重点是为未来的信息技术开发混合铁电/半导体材料。铁电/半导体系统的多学科性质意味着几乎不可能在一个机构甚至一个国家拥有所有必要的专业知识。 将解决两个广泛的科学问题：应变如何影响线性电光（EO）效应（即普克尔斯效应），以及如何增强EO效应？电光效应描述了材料在静电场中折射率的变化，并且在许多技术应用中被利用，例如电光调制器和偏转器。铁电ABO 3化合物如BTO表现出异常大的EO系数，因此是光学器件的首选材料。 一种非技术性的解决方案在硅上集成电光有源BTO可以为实现具有行业变化性能的新型光子器件铺平道路。硅光子学是一种将半导体逻辑与快速宽带光通信相结合的混合技术，它的发展可以极大地受益于铁电氧化物的线性电光特性，这是体硅中不存在的特性，是一种无缝连接电域和光域的新方法。目前，在最先进的超级计算机（如IBM Roadrunner）中，不超过5%的互连是光学的。因此，改善光学互连对于推进信息技术具有巨大的前景。随着科学研究变得越来越多的跨国性，如果我们想确保美国在明天的全球市场中的竞争力，那么让我们的学生在这个高度合作的国际环境中工作是至关重要的。IRES的集体经验将为我们的学生在竞争日益激烈的技术世界中的国际市场上的科学事业做好准备，科学家们预计将拥有一系列技能。该计划将涉及三名研究生，一名专注于第一原理理论，两名专注于生长和电光特性。每年，每个学生将在苏黎世的IBM工厂度过长达24周的时间。学生将参与完整的工艺流程，从材料生长到设备制造和表征，从而学习如何处理材料和制造设备。预计理论学生将与IBM研究人员进行光学结构和设备的模拟和设计进行强有力的互动。

A Technical descriptionThe proposed collaboration proposes a joint research study of the electro-optical properties of BaTiO3 (BTO) films grown on Si by a group in University of Texas Austin and the group at IBM Zurich. The proposed collaboration is focused on developing hybrid ferroelectric/semiconductor materials for future information technology. The multidisciplinary nature of ferroelectric/ semiconductor systems means it is almost impossible to have all the necessary expertise in one institution, or even in one country. Two broad scientific questions will be addressed: how does strain affect the linear electro-optical (EO) effect (i.e. Pockels effect), and how can the EO effect can be enhanced? The EO effect describes the change of refractive index of a material in a static electric field, and is exploited in many technological applications such as electro-optical modulators and deflectors. Ferroelectric ABO3 compounds such as BTO exhibit unusually large EO coefficients and are therefore materials of choice for optical devices. A Non-technical descriptionThe integration of electro-optically active BTO on silicon can pave the way to the realization of a new variety of photonic devices with industry-changing performance. The development of silicon photonics, a hybrid technology combining semiconductor logic with fast broadband optical communications, could greatly benefit from the linear electro-optical properties of ferroelectric oxides, a property not present in bulk silicon, as a novel way to seamlessly connect the electrical and optical domains. Currently, no more than 5% of interconnects in a state of the art supercomputer, such as the IBM Roadrunner, are optical. Improving optical interconnects is thus tremendously promising for advancing information technology. With scientific research becoming increasingly multinational, it is of paramount importance to prepare our students to work in this highly collaborative international environment if we want to ensure US competitiveness in the global marketplace of tomorrow. The collective IRES experience will prepare our students for scientific careers in an international market place in an increasingly competitive technological world where scientists are expected to have a range of skills.The program will involve three graduate students, one focusing on first principles theory and two focusing on growth and electro-optical characterization. Every year, each student will spend up to twenty four weeks at the IBM facility in Zurich. Students will participate in the complete process flow, from materials growth to device fabrication and characterization, and thus learn how to process the materials and manufacture devices. It is expected that the theory students will develop a strong interaction with IBM researchers performing simulation and design of optical structures and devices.