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Defect-Managed, High-Mobility Oxide Thin Films and Heterostructures for Fundamental Study

Defect-Managed, High-Mobility Oxide Thin Films and Heterostructures for Fundamental Study
用于基础研究的缺陷管理、高迁移率氧化物薄膜和异质结构
批准号:
1410888
负责人:
Bharat Jalan
金额:
$36.6万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2014
资助国家:
美国
项目状态:
已结题
起止时间:
2014-09-15 至 2018-08-31

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中文摘要
翻译
非技术描述:该项目的重点是开发一种先进的薄膜沉积技术,用于合成一类新的高度完美的复合氧化物。这些材料具有多功能特性,对于下一代电力电子和能量转换设备具有极大的兴趣。对这些具有前所未有的结构质量和低缺陷的材料的探索为理论模型的实验测试提供了有价值的投入,此外还促进了材料物理学在减小尺寸和维度下的基础研究。研究活动通过培训和“科学意识”讲习班,为当地高中、少数民族组织和社区学院的学生的专业发展经验作出贡献。技术规格:通过建立分子束外延生长方法,该项目正在研究高化学计量、精确掺杂、缺陷管理的复合氧化物的基础物理,这些复合氧化物具有出色的室温电子学潜力。该项目旨在通过进行详细的结构和电子输运研究来利用这些结构,以了解并最终控制特定缺陷、局部结构和电子迁移率。特别是,这项工作正在寻求对因素的基本理解,这些因素使用“模型”材料系统(BaSnO3)控制钙钛矿氧化物中的室温电子迁移率,该系统提供了通过缺陷管理和远程掺杂方法提高室温电子迁移率的机会。该项目为研究生、本科生和高中生提供了在材料科学与工程、电气工程、材料化学和材料物理等跨学科领域接受培训的机会。 学生将获得尖端薄膜沉积方法、先进表征技术和理论计算的经验。该项目还通过培训在明尼阿波利斯当地社区学院参加真空和薄膜技术课程的学生,为教育推广做出贡献。这些学生通常在完成该计划后找到技术人员的工作。
英文摘要
NON-TECHNICAL DESCRIPTION: This project focuses on the development of an advanced state-of-the-art thin film deposition technique for the synthesis of a new class of complex oxides that are highly perfect. These materials possess multi-functional properties that are of great interest for next generation devices of power electronics and energy conversion. The exploration of these materials with unprecedented structure quality and low defects provides valuable input for experimental testing of theoretical models, in addition to facilitating the fundamental study of materials physics at reduced size and dimensionality. The research activities contribute to the professional development experience for students from local high schools, minority organizations and community colleges through training and "science awareness" workshops. TECHNICAL DETAILS: Through the establishment of molecular beam epitaxy growth approaches, this project is studying the fundamental physics of highly stoichiometric, precisely doped, defect-managed complex oxides with outstanding potential for room temperature electronics. The project is seeking to exploit these structures by conducting detailed structural and electronic transport studies in order to understand, and eventually control, specific defects, local structure, and electronic mobility. In particular, the work is seeking a fundamental understanding of factors, which control room temperature electron mobility in perovskite oxides using a "model" material system (BaSnO3) that presents opportunities to enhance electron mobility at room temperature via defect-management and remote doping approaches. The project is providing opportunities for graduate, undergraduate and high school students to obtain training in the interdisciplinary areas of materials science and engineering, electrical engineering, materials chemistry, and materials physics. Students are gaining experience with cutting-edge thin film deposition approaches, advanced characterization techniques, and theoretical calculations. The project also contributes to the education outreach by training students enrolled in a vacuum and thin film technology program at local community colleges in Minneapolis. These students are often find employment as technicians after completing this program.
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High Mobility Binary and Ternary Germanate Films and Heterostructures
  • 批准号:
    2306273
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $57.96万
  • 财政年份:
    2023
  • 负责人:
    Bharat Jalan
  • 依托单位:
Understanding and Controlling Defects, Disorder and Electronic Transport in High Mobility Perovskite Oxides
  • 批准号:
    1741801
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $47.55万
  • 财政年份:
    2017
  • 负责人:
    Bharat Jalan
  • 依托单位:
海外基金