Understanding and Controlling Defects, Disorder and Electronic Transport in High Mobility Perovskite Oxides

了解和控制高迁移率钙钛矿氧化物中的缺陷、无序和电子传输

基本信息

批准号：
1741801
负责人：
Bharat Jalan
金额：
$ 47.55万
依托单位：
University of Minnesota-Twin Cities
依托单位国家：
美国
项目类别：
Continuing Grant
财政年份：
2017
资助国家：
美国
起止时间：
2017-08-15 至 2022-07-31
项目状态：
已结题

来源：
https://www.nsf.gov/awardsearch/showAward?AWD_ID=1741801&HistoricalAwards=false
关键词：
Understanding Controlling Defects Disorder Electronic

项目摘要

NON-TECHNICAL DESCRIPTION: This project focuses on the synthesis of a new class of oxide materials using an advanced state-of-the-art thin film deposition technique. These materials possess high conductivity and a wide bandgap - so light can pass through easily, making it optically transparent. These properties are of great interest for next generation electronic devices such as high-power electronics, transparent displays, touchscreens and solar cells. The research activities contribute to the professional development experience for students from local high schools, minority organizations and community colleges through education, training and hands-on workshops. TECHNICAL DETAILS: Through a combination of experimental and computational techniques, the project is investigating fundamental factors, at the atomic level of detail, that influence the defect formation and electronic properties in strain-engineered alkaline-earth stannate (Sr1-xBaxSnO3) thin films. In particular, the project is seeking to understand, and control defects specifically dislocations, local structure, and electronic mobility in these materials with an ultimate goal to create a new class of high-mobility semiconducting materials with wide bandgap for room-temperature applications. The project is also exploiting synthesis methods for atomic level control of point defects and structural defects in complex oxides. The project is providing opportunities for graduate, undergraduate and high school students to obtain training on cutting-edge thin film deposition approaches, advanced characterization techniques, and theoretical calculations.

非技术描述：该项目着重于使用先进的最先进的薄膜沉积技术的新型氧化物材料的合成。这些材料具有较高的电导率和宽带的带隙 - 因此光可以轻松地通过，使其在光学上透明。对于下一代电子设备，例如高功率电子设备，透明显示，触摸屏和太阳能电池，这些特性引起了极大的关注。研究活动通过教育，培训和动手讲习班为当地高中，少数群体组织和社区大学的学生提供了专业发展经验。技术详细信息：通过实验和计算技术的结合，该项目正在研究原子级别的基本因素，这些因素会影响菌株工程碱性钟表酸盐（SR1-XBAXSSNO3）的缺陷形成和电子特性。特别是，该项目正在寻求理解和控制缺陷，这些缺陷在这些材料中特异性位错，局部结构和电子机动性具有最终目标，以创建具有宽带宽带的新型高动力半导体材料，用于宽敞的室温应用。该项目还利用合成方法来控制复杂氧化物中点缺陷和结构缺陷的原子水平。该项目为毕业生，本科和高中生提供了有关尖端薄膜沉积方法，高级表征技术和理论计算的培训的机会。

项目成果

期刊论文数量（18）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

Optimizing Ohmic contacts to Nd-doped n-type SrSnO 3

优化 Nd 掺杂 n 型 SrSnO 3 的欧姆接触

DOI：
10.1063/5.0027470
发表时间：
2021
期刊：
Applied Physics Letters
影响因子：
4
作者：
Saran Kumar Chaganti, V. R.;Golani, Prafful;Truttmann, Tristan K.;Liu, Fengdeng;Jalan, Bharat;Koester, Steven J.
通讯作者：
Koester, Steven J.

Self-Assembled Periodic Nanostructures Using Martensitic Phase Transformations

利用马氏体相变自组装周期性纳米结构

DOI：
10.1021/acs.nanolett.0c03708
发表时间：
2021
期刊：
Nano Letters
影响因子：
10.8
作者：
Prakash, Abhinav;Wang, Tianqi;Bucsek, Ashley;Truttmann, Tristan K.;Fali, Alireza;Cotrufo, Michele;Yun, Hwanhui;Kim, Jong-Woo;Ryan, Philip J.;Mkhoyan, K. Andre
通讯作者：
Mkhoyan, K. Andre

SrSnO₃ Metal-Semiconductor Field-Effect Transistor With GHz Operation

SrSnO™ 金属半导体场效应晶体管，工作频率 GHz

DOI：
10.1109/led.2020.3040417
发表时间：
2021
期刊：
IEEE Electron Device Letters
影响因子：
4.9
作者：
Wen, Jiaxuan;Chaganti, V. R.;Truttmann, Tristan K.;Liu, Fengdeng;Jalan, Bharat;Koester, Steven J.
通讯作者：
Koester, Steven J.

A review of molecular-beam epitaxy of wide bandgap complex oxide semiconductors