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Understanding and Controlling Defects, Disorder and Electronic Transport in High Mobility Perovskite Oxides

Understanding and Controlling Defects, Disorder and Electronic Transport in High Mobility Perovskite Oxides
了解和控制高迁移率钙钛矿氧化物中的缺陷、无序和电子传输
批准号:
1741801
负责人:
Bharat Jalan
金额:
$47.55万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2017
资助国家:
美国
项目状态:
已结题
起止时间:
2017-08-15 至 2022-07-31

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中文摘要
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英文摘要
NON-TECHNICAL DESCRIPTION: This project focuses on the synthesis of a new class of oxide materials using an advanced state-of-the-art thin film deposition technique. These materials possess high conductivity and a wide bandgap - so light can pass through easily, making it optically transparent. These properties are of great interest for next generation electronic devices such as high-power electronics, transparent displays, touchscreens and solar cells. The research activities contribute to the professional development experience for students from local high schools, minority organizations and community colleges through education, training and hands-on workshops. TECHNICAL DETAILS: Through a combination of experimental and computational techniques, the project is investigating fundamental factors, at the atomic level of detail, that influence the defect formation and electronic properties in strain-engineered alkaline-earth stannate (Sr1-xBaxSnO3) thin films. In particular, the project is seeking to understand, and control defects specifically dislocations, local structure, and electronic mobility in these materials with an ultimate goal to create a new class of high-mobility semiconducting materials with wide bandgap for room-temperature applications. The project is also exploiting synthesis methods for atomic level control of point defects and structural defects in complex oxides. The project is providing opportunities for graduate, undergraduate and high school students to obtain training on cutting-edge thin film deposition approaches, advanced characterization techniques, and theoretical calculations.
期刊论文(18)
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会议论文
Optimizing Ohmic contacts to Nd-doped n-type SrSnO 3
优化 Nd 掺杂 n 型 SrSnO 3 的欧姆接触
DOI: 10.1063/5.0027470
发表时间: 2021
期刊: Applied Physics Letters
影响因子: 4
作者: [Saran Kumar Chaganti, V. R., Golani, Prafful, Truttmann, Tristan K., Liu, Fengdeng, Jalan, Bharat, Koester, Steven J.]
通讯作者: Koester, Steven J.
Dopant solubility and charge compensation in La-doped SrSnO 3 films
La 掺杂 SrSnO 3 薄膜中的掺杂溶解度和电荷补偿
DOI: 10.1063/1.5119272
发表时间: 2019
期刊: Applied Physics Letters
影响因子: 4
作者: [Truttmann, Tristan, Prakash, Abhinav, Yue, Jin, Mates, Thomas E., Jalan, Bharat]
通讯作者: Jalan, Bharat
DOI: 10.1021/acs.jpcc.8b00653
发表时间: 2018-05-31
期刊: JOURNAL OF PHYSICAL CHEMISTRY C
影响因子: 3.7
作者: [Chen, Liang, Zhang, Yingying, Hou, Yu]
通讯作者: Hou, Yu
SrSnO₃ Metal-Semiconductor Field-Effect Transistor With GHz Operation
SrSnO™ 金属半导体场效应晶体管,工作频率 GHz
DOI: 10.1109/led.2020.3040417
发表时间: 2021
期刊: IEEE Electron Device Letters
影响因子: 4.9
作者: [Wen, Jiaxuan, Chaganti, V. R., Truttmann, Tristan K., Liu, Fengdeng, Jalan, Bharat, Koester, Steven J.]
通讯作者: Koester, Steven J.
8
    High Mobility Binary and Ternary Germanate Films and Heterostructures
    • 批准号:
      2306273
    • 项目类别:
      Continuing Grant
    • 资助金额:
      $57.96万
    • 财政年份:
      2023
    • 负责人:
      Bharat Jalan
    • 依托单位:
    Defect-Managed, High-Mobility Oxide Thin Films and Heterostructures for Fundamental Study
    • 批准号:
      1410888
    • 项目类别:
      Standard Grant
    • 资助金额:
      $36.6万
    • 财政年份:
      2014
    • 负责人:
      Bharat Jalan
    • 依托单位:
    海外基金