High Mobility Binary and Ternary Germanate Films and Heterostructures

非技术描述：超宽带隙（UWBG）半导体是一种具有宽带隙的材料，通常大于4.0 eV。UWBG半导体的主要优点之一是它们能够处理高功率密度而不会遭受击穿或其他形式的退化。这些半导体的另一个优点是它们能够在比传统半导体更高的电压和频率下工作。这使得它们非常适合用于大功率电子设备，如功率转换器，逆变器，整流器和高频设备。它们还具有很强的抗辐射和耐高温性能，这使得它们非常适合用于航空航天和国防应用。本项目主要研究这种材料的合成和表征——一种基于iv族氧化物的宽带隙半导体。该项目将通过教育、培训和实践讲习班，进一步为当地高中、少数民族组织和社区大学的学生提供专业发展经验。技术描述：晶体结构和化学键对半导体的结构和电学性能有着深远的影响。通过系统的方法，该项目正在研究合成具有高纯度、可控结构和良好表征的内在缺陷浓度的iv族氧化物基宽带隙半导体，作为实现下一代高迁移率、高功率器件平台的重要组成部分。特别是，该项目在详细的结构和电子输运研究中调查这些结构，以开发这些材料的应变工程，并了解和控制缺陷（特别是位错和点缺陷），局部结构和电子迁移率。该奖项反映了美国国家科学基金会的法定使命，并通过使用基金会的知识价值和更广泛的影响审查标准进行评估，被认为值得支持。

Nontechnical description:An ultra-wide bandgap (UWBG) semiconductor is a material that has a wide bandgap, typically greater than 4.0 eV. One of the key benefits of UWBG semiconductors is their ability to handle high power densities without suffering from breakdown or other forms of degradation. Another benefit of these semiconductors is their ability to operate at higher voltages and frequencies than traditional semiconductors. This makes them ideal for use in high-power electronics, such as power converters, inverters, rectifiers and high frequency devices. They are also highly resistant to radiation and high temperatures, which makes them well-suited for use in aerospace and defense applications. This project focuses on the synthesis and characterization of such a material - a group-IV oxide-based wide bandgap semiconductor. This project will further contribute to the professional development experience for students from local high schools, minority organizations and community colleges through education, training and hands-on workshops. Technical description:Crystal structure and chemical bonding can have profound impact on the structural and electrical properties of a semiconductor. Through a systematic approach, this project is investigating the synthesis of group-IV oxide-based wide bandgap semiconductors with high purity, controlled structure and well-characterized intrinsic defect concentrations as an essential component to realize a next-generation platform for high-mobility, high-power devices. In particular, the project is investigating these structures in detailed structural and electronic transport studies to exploit strain engineering of these materials, and to understand, and control defects (specifically dislocations and point defects), local structure, and electronic mobility.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.