Electrochemical Society Symposium on GaN and SiC Power Technologies 4. Held October 5-10, 2014, Cancun, MX.

电化学学会关于GaN和SiC电源技术的研讨会将于2014年10月5日至10日在墨西哥坎昆举行。研讨会将通过聚集不同群体的专家、研究人员和学生，促进各种类型氮化镓（GaN）和碳化硅（SiC）器件的领先研究进展。届时将有特邀演讲和专题报告。研讨会鼓励研究生参与，并为他们提供接触新的宽带隙功率半导体技术的机会。讨论的主题包括材料和制造技术、功率半导体开关器件、功率封装和热管理、可靠性工程和器件、电路建模。研讨会将促进动力器件技术领域领先研究人员之间的互动，并将重点关注这些材料及其应用的技术挑战。研讨会的亮点将通过电化学学会的会议记录在世界范围内发布。

The Electrochemical Society Symposium on GaN and SiC Power Technologies 4 will be held in October 5-10, 2014 in Cancun, MX. The symposium will foster advances in the leading research on various types of Gallium Nitride (GaN) and Silicon Carbide (SiC) devices by gathering a diverse group of experts, researchers and students. There will be invited talks and contributed presentations. The Symposium encourages graduate student participation and provides them with the opportunity to gain exposure to new wide bandgap power semiconductor technologies. Topics to be addressed include materials and fabrication technology, power semiconductor switching devices, power packaging and thermal management, reliability engineering and device, circuit modeling. The Symposium will promote interactions between leading researchers in power device technologies and will focus on the technical challenges of these materials and their applications. The highlights of the symposium will be accessible worldwide through the Electrochemical Society's Proceedings.