SBIR Phase I: Activation and Mobility Profiling for III-V Semiconductor Materials

这个小企业创新研究（SBIR）第一阶段项目的更广泛的影响/商业潜力将是开发一种新的III-V半导体化合物分析工具，对发光二极管（LED）制造和高移动性通道器件行业产生直接影响。目前，在LED半导体层的外延生长过程中，相对较低的产量对行业造成了重大损失。高移动性集成器件和LED外延开发团队可以访问提供半导体层部分信息和计量的方法。这里提出的系统将提供材料的完整电气数据，并可以显著缩短反馈时间，从而提高产量和降低制造成本。这个小企业创新研究第一阶段项目将建立一个原型系统，直接测量III-V半导体的高分辨率移动性和激活概况。目前，电剖面方法不能测量构成III-V半导体器件工业基础的活性材料的迁移率剖面。因此，研究人员不能考虑工艺变化对电子材料迁移率曲线的影响。这阻碍了材料的完整电学表征，以及材料生长/植入和激活过程的优化。该项目的预期结果是一个功能系统，将提供更好和更快的分析电子材料。

The broader impact/commercial potential of this Small Business Innovation Research (SBIR) Phase I project will be the development of a novel analysis tool for III-V semiconductor compounds with immediate impact in Light Emitting Diode (LED) manufacturing and high-mobility channel device industries. Currently, relatively low yields during epitaxial growth of the LED semiconductor layers cause a significant loss to the industry. High mobility integrated devices and LED epitaxial development teams have access to methods that provide partial information and metrology about the semiconductor layers. The system proposed here will provide complete electrical data on the materials and could cut significantly improve the feedback time, resulting in higher yields and lower manufacturing costs.This Small Business Innovation Research Phase I project will build a prototype system to directly measure high-resolution mobility and activation profiles for III-V semiconductors. Currently, electrical profiling methods do not measure mobility profiles of activated materials that form the basis of the III-V semiconductor device industries. Thus, researchers cannot take into account the effect of process variations on the mobility profiles of the electronic materials. This prevents the complete electrical characterization of the material, and the optimization of the material growth/implantation and activation processes. The anticipated outcome of this project is a functional system that will provide better and quicker analysis on electronic materials.