E2CDA: Type I: Excitonic Devices

该奖项支持一个旨在开发先进电子设备替代品的项目。在十亿分之一米的长度尺度上，一种特殊的结构设计允许创造新的准粒子，称为间接激子。间接激子是独特的，因为它们可以像电子设备中的电子一样被电子控制，并且可以发出电子本身无法发出的光。该项目旨在探索激子器件的基本极限，并开发可以扩展节能计算极限的激子器件。参与该项目的学生有机会对物理学、材料科学和工程学的前沿进行探索性研究。该奖项支持一个旨在开发激子器件的项目。激子器件基于磁性和电荷之外的计算状态变量，即激子。由于激子的特性，激子器件特别适合于开发先进的电子学替代品：激子是允许创建节能计算的玻色子，激子信号处理可以直接耦合到光通信，激子电路可以在比光子器件更小的深度亚波长尺度上实现。激子器件的优点需要特别设计激子。通过使用间接激子IXs实现了突破。IX是电子和空穴在分离层中的结合对。IX的独特性质使其与传统激子不同，适合于节能计算的发展：IX的能量、通量和发射速率可以由电压控制。该项目的目标包括探索用于节能计算的激子器件的基本限制，探索III-V结构中的激子器件以及基于过渡金属二硫化物的二维单原子层的新型人工材料。

This award supports a project directed towards the development of an advanced alternative to electronic devices. A special design of the structures on a length scale of a billionth part of a meter allows the creation of new quasi-particles called indirect excitons. The indirect excitons are unique because they can be electronically controlled like electrons in electronic devices and can shine light that electrons cannot do by themselves. The project is directed towards exploring the fundamental limits of excitonic devices and development of excitonic devices that can extend the limits of energy-efficient computation. The students involved with this project have the opportunity to perform exploratory research on the cutting edge of physics, material science, and engineering.This award supports a project directed towards development of excitonic devices. Excitonic devices are based on computational state variables beyond magnetism and charge, namely on excitons. Excitonic devices are particularly well suited to the development of an advanced alternative to electronics due to the properties of excitons: Excitons are bosons that allows creating energy-efficient computation, excitonic signal processing can be directly coupled to optical communication, and excitonic circuits can be realized at deeply subwavelength scales smaller than for photonic devices. The advantages of excitonic devices require specially designed excitons. A breakthrough was achieved by using indirect excitons, IXs. An IX is a bound pair of an electron and a hole in separated layers. Unique properties of IXs make them different from conventional excitons and suitable for the development of energy-efficient computing: the IX energy, fluxes, and emission rate can be controlled by voltage. Objectives of this project include exploring the fundamental limits of excitonic devices for energy-efficient computing and exploring excitonic devices in III-V structures and in new artificial materials based on 2-D single-atomic-layers of transition-metal dichalcogenide.