Terahertz emission from plasma waves in GaN field effect transistors

本项目旨在通过采用等离子体波发生机制开发半导体超高频辐射源。目标频率范围是从0.3 THz到几THz的THz范围。文献中的一系列实验最近提供了这样的证据，即场效应晶体管的二维电子气中的等离子体波的激发允许将作为高频辐射源的半导体电子元件的操作范围扩展到远远超过晶体管的经典截止频率的频率。在这个项目中，我们的目标是增强等离子体振荡产生和辐射的功率。这将通过三种手段来实现，即改善对载流子密度分布的线性度的控制、优化集成天线以及通过分谐波注入。后者的目的也在同步的几个晶体管（发射极）的功率组合。提高性能的措施将伴随着一个详细的理论分析的条件下，有效的等离子体波的产生。

This project aims to develop semiconductor ultrahigh-frequency radiation sources by employing a plasma-wave generation mechanism. The targeted frequency range is the THz regime from 0.3 THz up to several THz. A series of experiments in the literature has recently provided the proof that the excitation of plasma waves in the two-dimensional electron gas of field-effect transistors allows to extend the operation range of semiconductor electronic elements as high-frequency radiation sources to frequencies which well exceed the classical cut-off frequency of the transistors. In this project we target the enhancement of the power generated by and radiated from plasma oscillations. This is to be achieved by three means, the improved control of the abruptness of the carrier density profile, the optimization of integrated antennas, and by sub-harmonic injection. The latter aims also at synchronization of several transistors (emitters) for power-combining. The measures for performance enhancement will be accompanied by a detailed theoretical analysis of the conditions for efficient plasma-wave generation.