MRI: Acquisition Of an Atomic Layer Deposition System
MRI: Acquisition Of an Atomic Layer Deposition System
批准号:
1828090
负责人:
Hanwei Gao
金额:
$30.1万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2018
资助国家:
美国
项目状态:
已结题
起止时间:
2018-08-01 至 2021-07-31
中文摘要
这项来自主要研究仪器计划的奖项支持佛罗里达州立大学(FSU)收购原子层沉积(ALD)系统。 该系统将加强北方佛罗里达地区的材料研究和教育。ALD是一种先进的薄膜沉积技术,其独特的工作原理使薄膜沉积具有前所未有的厚度精度,可低至单原子层。ALD在工业和学术研究中的应用,已经在微电子、可持续能源、先进电池、化学和生物传感、照明和显示技术的材料开发方面取得了显着进步,通过该奖项获得的ALD系统将安装在凝聚态物质和材料物理(CMMP)用户设施,该工具的影响将最大化,该区域的整个研究界,包括为少数群体服务的机构、女子学院以及工业伙伴都可以广泛使用。该设施还将作为从K-12到研究生院的各级学生培训和教育的基础。原子层沉积(ALD)系统将通过创建具有无针孔质量、保形形态和原子层精度的薄膜来特别增强佛罗里达州立大学(FSU)的纳米纤维能力。凭借其在材料研究方面的坚定承诺,FSU迫切需要这些独特的功能和能力,特别是因为具有三维表面微结构的材料和设备越来越多地参与最近的研究活动。在FSU和FAMU的至少十五个研究小组,在物理学,化学生物化学,化学生物医学工程,机械工程和电气工程的学科跨越,将立即受益于定期访问ALD系统,涵盖纳米电子学,纳米光子学,太阳能收集,能量存储,微电子学和自旋电子学的研究课题。不仅当前的研究项目将从此次仪器采购中受益,新的合作活动预计将通过在互动和多学科环境中分享ALD而受到启发。该奖项反映了NSF的法定使命,并被认为值得通过使用基金会的知识价值和更广泛的影响审查标准进行评估来支持。
英文摘要
This award from the Major Research Instrumentation program supports Florida State University (FSU) with the acquisition of an Atomic Layer Deposition (ALD) system. The system will enhance the materials research and education in the northern Florida region. ALD is an advanced thin film deposition technique with a unique operating principle enabling thin film deposition with unprecedented precision of thickness down to single atomic layers. Applications of ALD, in both industrial and academic research, have led to remarkable advancements in materials development for microelectronics, sustainable energy, advanced batteries, chemical and biological sensing, lighting and display technology, etc. The ALD system acquired through this award will be installed in the Condensed Matter and Materials Physics (CMMP) User Facility where the impact of the instrument will be maximized with broad access available to the entire research community in the region, including minority-serving institutions, and women's colleges as well as industrial partners. This facility will also serve as a basis for student training and education at all level from K-12 to graduate schools.The Atomic Layer Deposition (ALD) system will particularly enhance the nanofabrication capabilities at Florida State University (FSU) by creating thin films with pinhole-free quality, conformal morphology, and atomic layer precision. With its strong commitments in materials research, FSU is in pressing need of these unique features and capabilities especially since materials and devices with three-dimensional surface microstructures have become increasingly involved in recent research activities. At least fifteen research groups at FSU and FAMU, in disciplines spanning across physics, chemistry & biochemistry, chemical & biomedical engineering, mechanical engineering, and electrical engineering, will benefit immediately from regular access to an ALD system, covering research subjects from nanoelectronics, nanophotonics, solar energy harvesting, energy storage, photocatalysis, and spintronics. Not only will the current research projects benefit from this instrument acquisition, new collaborative activities are expected to be inspired by sharing the ALD in an interactive and multidisciplinary environment.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
期刊论文(3)
专著(0)
科研奖励(0)
会议论文
Linear and Nonlinear Two-Terminal Spin-Valve Effect from Chirality-Induced Spin Selectivity
手性诱导自旋选择性的线性和非线性两端自旋阀效应
DOI:
10.1021/acsnano.0c07438
发表时间:
2020-11-24
期刊:
ACS NANO
影响因子:
17.1
作者:
[Liu, Tianhan, Wang, Xiaolei, Xiong, Peng]
通讯作者:
Xiong, Peng
DOI:
10.1021/acs.nanolett.0c03166
发表时间:
2020-11-11
期刊:
NANO LETTERS
影响因子:
10.8
作者:
[Barreda, Jorge L., Hu, Longqian, Xiong, Peng]
通讯作者:
Xiong, Peng
Collaborative Research: Quantum Transport in Self-Assembled Hybrid Superlattices
-
批准号:2110814
-
项目类别:Standard Grant
-
资助金额:$48.3万
-
财政年份:2021
-
负责人:Hanwei Gao
-
依托单位:
Collaborative Research: Interfacial Engineering for Stabilizing Hybrid Perovskites and Devices
-
批准号:2131610
-
项目类别:Standard Grant
-
资助金额:$34.63万
-
财政年份:2021
-
负责人:Hanwei Gao
-
依托单位:
Collaborative Research: Scalable Photo-patterning of Two-Dimensional Nanomaterials for Reconfigurable Microelectronics
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批准号:1930809
-
项目类别:Standard Grant
-
资助金额:$19.66万
-
财政年份:2019
-
负责人:Hanwei Gao
-
依托单位:
海外基金