Collaborative Research: Scalable Photo-patterning of Two-Dimensional Nanomaterials for Reconfigurable Microelectronics

合作研究：用于可重构微电子学的二维纳米材料的可扩展光图案化

• 批准号: 1930809
• 负责人: Hanwei Gao
• 金额: $ 19.66万
• 依托单位: Florida State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2019
• 资助国家: 美国
• 起止时间: 2019-09-01 至 2023-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1930809&HistoricalAwards=false
• 关键词: Collaborative; Research; Scalable; Photo; patterning

Advances in modern electronics have been largely driven by the success in fabricating and packaging microscopic devices into integrated circuits. The recent emergence of two-dimensional nanomaterials enables unique and superior electronic and optoelectronic circuit functionalities, which are promising for the next-generation microelectronics beyond silicon. A key challenge to realizing this vision is the lack of manufacturing approaches that are capable of integrating and producing two-dimensional nanomaterial-based microelectronics at a large scale. This award addresses this challenge through fundamental research on a photo-patternable medium, which can lead to scalable manufacturing of reconfigurable microelectronic devices. The photo-patterning method is applicable to various two-dimensional materials for versatile circuit functionalities. Reconfigurable microelectronics is a key component enabling advanced technologies such as artificial intelligence and the internet of things. This project enhances U.S. competitiveness in these critical areas and advances national prosperity and security. Undergraduate and graduate students and senior researchers benefit from this project through multidisciplinary laboratory research, and the general public benefits through multifaceted outreach activities.This project investigates a novel manufacturing approach, based on switchable non-volatile ferroelectric gating, to define fundamental electronic elements (e.g. p-n junctions) and to fabricate functional electronic devices (e.g. logic gates and photodiode arrays) in a wide range of two-dimensional (2D) nanomaterials. This approach centers on photo-patterning the ferroelectric phase regions in In2Se3 thin films, a scalable process that is compatible with established photolithography procedures. Additional benefits of this approach include circuit reconfigurability, maintaining the material lattice pristineness as no defects or dopants are introduced for the p-n junction formations, and compatibility with chemically sensitive materials such as the halide perovskites. This project addresses a key scientific issue central to the successful implementation of this approach, particularly the photon-induced phase transition kinetics in In2Se3 as the fundamental mechanism underlying the photo-patterning process. The mechanistic insight obtained provides an important guide for optimizing the process parameters. In addition, the effects of the ferroelectric gating are studied with a focus on verifying and understanding the resulting p-n junction characteristics, such as the barrier height and the space-charge region width, which are critical to device prototyping. The project is a collaboration between experts in synthesis and characterization of In2Se3 and halide perovskite thin films and involves the study of the photo-patterning process and the ferroelectric gating effects on different 2D nanomaterial systems, demonstrating the versatility of this scalable approach in manufacturing reconfigurable microelectronic devices and circuits.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

现代电子学的进步在很大程度上是由成功地将微型器件制造和封装到集成电路中所推动的。近年来二维纳米材料的出现使得独特的和上级的电子和光电电路功能成为可能，这对于硅之外的下一代微电子学是有希望的。实现这一愿景的一个关键挑战是缺乏能够大规模集成和生产二维纳米材料微电子的制造方法。该奖项通过对可光图案化介质的基础研究来解决这一挑战，这可以导致可重构微电子器件的可扩展制造。光图案化方法适用于各种二维材料，用于多功能电路功能。可重构微电子是实现人工智能和物联网等先进技术的关键组件。该项目将增强美国在这些关键领域的竞争力，促进国家繁荣和安全。本科生、研究生和高级研究人员通过多学科实验室研究从该项目中受益，公众通过多方面的外联活动受益。该项目研究了一种新的制造方法，基于可切换的非挥发性铁电门控，定义基本的电子元件本发明的目的在于提供一种用于制造纳米材料（例如p-n结）的方法，以及在宽范围的二维（2D）纳米材料中制造功能性电子器件（例如逻辑门和光电二极管阵列）。这种方法集中在In 2Se 3薄膜中的铁电相区域的光图案化上，这是一种与已建立的光刻程序兼容的可扩展过程。这种方法的附加益处包括电路可重构性、保持材料晶格原始性（因为没有缺陷或掺杂剂被引入用于p-n结形成）以及与化学敏感材料（诸如卤化物钙钛矿）的兼容性。该项目解决了一个关键的科学问题，中央成功实施这种方法，特别是在In 2Se 3的光子诱导相变动力学的基本机制的光图案化过程。所获得的机理见解为优化工艺参数提供了重要指导。此外，铁电门控的影响进行了研究，重点是验证和理解所产生的p-n结特性，如势垒高度和空间电荷区宽度，这是至关重要的设备原型。该项目是In 2Se 3和卤化物钙钛矿薄膜合成和表征专家之间的合作，涉及研究光图案化过程和不同2D纳米材料系统的铁电门控效应，该奖项反映了NSF的法定使命，并被认为值得通过以下方式提供支持：使用基金会的知识价值和更广泛的影响审查标准进行评估。