EAGER: Tuning the collective phenomena in atomically thin metals by electrostatic doping
EAGER: Tuning the collective phenomena in atomically thin metals by electrostatic doping
批准号:
1830764
负责人:
Kin Fai Mak
金额:
$4.81万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2018
资助国家:
美国
项目状态:
已结题
起止时间:
2018-01-01 至 2018-11-30
中文摘要
非技术摘要:二维材料由只有几个原子厚的原子层组成。这些材料被称为货车德瓦耳斯(vdW)材料,层中的原子之间具有强相互作用,而与相邻层的相互作用较弱。 这导致了独特的电学和光学特性,可用于下一代电子设备。 该项目将开发新的样品制备和设备制造技术,使我们能够探测这些材料的独特电子和光学特性。 该计划还将提供特殊的机会,研究生,谁将获得第一手知识的前沿研究的二维材料和研究在国家实验室通过访问国家高磁场实验室在塔拉哈西,佛罗里达州。技术摘要:最近的进展,原子薄层的货车德瓦尔斯(vdW)材料的发展开辟了许多新的研究机会。例子包括石墨烯中无质量电子的独特电学和光学性质以及单层半导体过渡金属二硫属化物(TMD)中的Berry曲率效应。然而,这些性质大多与独立粒子现象有关。该项目将专注于原子薄TMD中的集体量子现象,并将探索通过离子液体门控进行载流子密度调制来调整模型二维(2D)TMD金属NbSe 2中的电荷密度波(CDW)顺序和超导性的可能性。该研究将通过开发新的样品制备和设备制造方法来实现,并将得到组合光学和传输探针的支持。该奖项反映了NSF的法定使命,并通过使用基金会的知识价值和更广泛的影响审查标准进行评估,被认为值得支持。
英文摘要
Non-technical Abstract:Two dimensional materials are composed of layers of atoms that are only a few atoms thick. These materials, known as van der Waals (vdW) materials, have strong interactions between the atoms in the layer and weak interactions to neighboring layers. This leads to unique electrical and optical properties which can be exploited for the next generation of electronic devices. This project will develop new sample preparation and device fabrication techniques that will allow us to probe the unique electronic and optical properties of these materials. This program will also provide exceptional opportunities for training of graduate students, who will gain first-hand knowledge of forefront research on 2D materials and research in a national lab through visits to the National High Magnetic Field Laboratory in Tallahassee, FL.Technical Abstract:Recent advances in the development of atomically thin layers of van der Waals (vdW) materials have opened up many new research opportunities. Examples include the unique electrical and optical properties of massless electrons in graphene and Berry curvature effects in monolayer semiconductor transition metal dichalcogenides (TMDs). These properties are, however, mostly associated with independent particle phenomena. This project will focus on collective quantum phenomena in atomically thin TMDs and will explore the possibility of tuning the charge-density-wave (CDW) order and superconductivity in a model two-dimensional (2D) TMD metal NbSe2 by carrier density modulation through ionic liquid gating. The study will be enabled by development of new sample preparation and device fabrication methods and will be supported by combined optical and transport probes.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
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EAGER: Tuning the collective phenomena in atomically thin metals by electrostatic doping
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批准号:1645901
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项目类别:Standard Grant
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资助金额:$10.0万
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财政年份:2016
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负责人:Kin Fai Mak
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依托单位:
海外基金