SBIR Phase II: Advancing High-Power Diamond Devices Towards Commercialization

小型企业创新研究(SBIR)第二阶段项目的更广泛影响/商业潜力是改进大功率设备，这些设备将提高电动汽车(EVS)及其充电站的效率和可靠性。通过将充电模块的功率从300千瓦增加到1兆瓦以上，拟议的高功率设备的开发可能会将电动汽车的充电时间减少到10分钟以下。此外，这项技术可能会通过提高效率来显著增加电动汽车的续航里程，并通过消除冷却系统来实现电源模块的小型化。这些系统以钻石为基础，在先进设备中具有特殊性能，将很容易扩展到需要高温操作(高于300摄氏度)和大功率开关能力的应用，如地热钻探、航空航天和电网，以及在极端环境和空间探索中的应用。该小型企业创新研究(SBIR)二期项目将制造在高温(300摄氏度)下可靠的下一代半导体大功率二极管(1200 V阻挡和10 A正向电流低于10 V)，并克服现有技术面临的许多挑战。与其他现有的半导体(宽禁带)材料相比，钻石具有更高的击穿电场；因此，钻石器件提供了更高的阻挡电压。该项目的技术目标包括优化材料沉积、器件设计和器件制造过程的工作流程，通过开发将击穿电场提高2-4倍的器件设计来实现1200V的阻断电压，从而使这项技术能够得到广泛的翻译。该奖项反映了NSF的法定使命，并通过使用基金会的智力优势和更广泛的影响审查标准进行评估，被认为值得支持。

The broader impact/commercial potential of this Small Business Innovation Research (SBIR) Phase II project is the improvement of high-power devices that will enhance the efficiency and reliability of electric vehicles (EVs) and their charging stations. The development of the proposed high-power devices will potentially reduce EV charging time to less than 10 minutes by increasing the charging module's power from 300 kW to over 1 MW. Furthermore, this technology can potentially increase the range of electric vehicles significantly by increasing efficiency, and miniaturizing power modules by eliminating cooling systems. These systems are based on diamonds, which have special properties when used in advanced devices, and will be easily extended to applications requiring high-temperature operation (above 300 C) and high-power switching capabilities, such as geothermal drilling, aerospace, and power grids, as well as application in extreme environments and space exploration.This Small Business Innovation Research (SBIR) Phase II project will fabricate next generation semiconductor high-power diodes (1200 V blocking and 10 A forward current at less than 10 V) that are reliable at high temperatures (300 C) and overcome many of the challenges with existing technologies. Diamond has a higher breakdown field than other existing semiconductor (wide bandgap) materials; thus, diamond devices offer the potential of higher blocking voltage. Technical objectives of this project include optimizing the workflow of material deposition, device design and device fabrication processes to achieve 1200 V blocking voltage by developing device designs that increase breakdown field by 2-4 times to enable broad translation of this technology.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.