FuSe-TG: Atomically Precise Graphene Nanoribbon-based Transistors: Materials, Devices, Circuits, and Systems

亚利桑那大学的Zafer Mutlu教授、加州大学伯克利分校的Michael Crommie教授、罗切斯特大学的Selcuk Kose教授、明尼苏达大学双子城分校的Ulya R. Karpuzcu教授、和科罗拉多矿业学院的Mehmet E. Belviranli得到了美国国家科学基金会半导体未来（FuSe）计划的支持，他们将组建一个由来自五个机构的多学科专家组成的团队，以确定和研究石墨烯纳米带场效应晶体管（GNRFET）计算系统在材料、器件、电路和系统层面面临的挑战。石墨烯纳米带（gnr）是一种一维（1D）材料，具有优异的电学、电子学、热学和功耗特性，最近成为取代硅基晶体管的有希望的候选材料。利用现有的科学流程和教育模式，大规模生产GNR材料、晶体管和相关设备可能需要几十年的时间。在这个团队建设的努力中，跨学科的研究团队将通过基于协同设计原则的整体模型加速这一过程。最初的规划阶段侧重于播种协同效应，并与学术界和工业界的新利益相关者建立研究联系。研究活动由全面的教育和劳动力发展计划补充，以满足半导体行业各个层次和阶段的熟练劳动力需求。计划举办讲习班，以促进来自不同人口和机构（包括社区学院）的学生和教师以及半导体工业的专业人员的参与。在这个项目中，将在不同的抽象层上对后硅半导体技术进行深入的探索。短期目标是通过发现适合器件加工和集成的非常规半导体材料，推进GNRFET技术，设计基本逻辑门和基准电路。具体目标是改善GNR的生长和gnrfet的单器件性能，开发n型gnrfet，以及构建和演示简单的GNR电路。电容和电感耦合的挑战，以及某些热特性的gnrfet，将被研究。将对基于gnrfet的计算系统进行设计空间探索。性能，能量和热行为的潜在应用将理论建模。该奖项反映了美国国家科学基金会的法定使命，并通过使用基金会的知识价值和更广泛的影响审查标准进行评估，被认为值得支持。

Professors Zafer Mutlu of the University of Arizona, Michael Crommie of the University of California, Berkeley, Selcuk Kose of the University of Rochester, Ulya R. Karpuzcu of the University of Minnesota, Twin Cities, and Mehmet E. Belviranli of Colorado School of Mines are supported by the NSF Future of Semiconductors (FuSe) Program to assemble a multidisciplinary team of experts from five institutions to identify and investigate the challenges facing graphene nanoribbon-based field effect transistor (GNRFET) computing system at the material, device, circuit, and system levels. Graphene nanoribbons (GNRs), a one-dimensional (1D) material with superb electrical, electronic, thermal, and power consumption properties, have recently emerged as a promising candidate to replace silicon-based transistors. The road to large-scale production of GNR materials, transistors, and associated devices could take decades using existing scientific processes and educational models. In this team-building effort, the interdisciplinary research team will accelerate this process through a holistic model based on co-design principles. The initial planning phase focuses on seeding synergy and establishing research connections with new stakeholders from academia and industry. The research activities are complemented by a comprehensive educational and workforce development plan addressing skilled labor needs at all levels and stages of the semiconductor industry. Workshops are planned to facilitate the involvement of students and teachers from diverse populations and institutions, including community colleges, and professionals from the semiconductor industry. In this project, a thorough exploration of the post-silicon semiconductor technology will be undertaken at different layers of abstraction. The short-term goal is to advance GNRFET technology, design basic logic gates, and benchmark circuits through discovery of nonconventional semiconducting materials suitable for processing and integration in devices. The specific targets are to improve the growth of GNRs and the single-device performance of GNRFETs, to develop n-type GNRFETs, and to build and demonstrate simple GNR circuits. Capacitive and inductive coupling challenges, as well as certain thermal characteristics of GNRFETs, will be investigated. A design space exploration towards GNRFET-based computing systems will be performed. The performance, energy and thermal behavior of potential applications will be theoretically modeled.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.