CISE-MSI : RCBP-ED: CCF-FET : Improving Reliability and Durability in Phase Change Main Memory (PCM)

相变存储器(PCM)是一种尖端类型的计算机存储技术，可以彻底改变数据存储和检索。相变材料使用特殊的材料，可以在两种状态之间切换，类似于冰如何随着温度从固体变成液体。这一独特的特性允许PCM快速存储和检索数据，即使在关闭电源的情况下也是如此。然而，相变材料面临着与其耐久性和可靠性有关的挑战。研究人员正在努力提高相变材料的耐用性和可靠性，使其更加坚固，适合各种应用。PCM研究的意义扩大了，并有可能弥合存储和主存之间的性能差距，从而导致更快、更高效的计算系统。这可以通过实现更快、更可靠的数据访问，对数据分析、人工智能和科学研究等领域产生深远影响。通过像NSF这样的组织投资于PCM研究是至关重要的，因为这项研究有可能塑造计算的未来，导致具有变革性应用的更快、更节能的系统造福社会。本项目旨在为PCM的设计和实现探索高效的计算机算法和体系结构，以满足消费者的存储需求。主要的重点是提高PCM技术的可靠性和耐用性，PCM技术是纳米级非易失性电数据存储的关键技术。这个项目从硬件和软件两个角度解决问题。在硬件方面，所有建议的解决方案都努力提高PCM主存储器系统的性能，同时解决与有限耐用性、硬错误和漂移引起的软错误相关的问题。从软件的角度来看，它涉及到操作系统对从虚拟内存地址到物理地址以及从物理地址到实际PCM地址的地址转换的支持。该奖项反映了NSF的法定使命，并通过使用基金会的智力优势和更广泛的影响审查标准进行评估，被认为值得支持。

Phase Change Memories (PCMs) are a cutting-edge type of computer memory technology that can revolutionize data storage and retrieval. PCMs use special materials that can switch between two states, similar to how ice can change from solid to liquid with temperature. This unique property allows PCMs to store and retrieve data quickly, even when the power is turned off. However, PCMs face challenges related to their endurance and reliability. Researchers are working to improve the durability and reliability of PCMs to make them more robust and suitable for various applications. The significance of PCM research extends and has the potential to bridge the performance gap between storage and main memory, leading to faster and more efficient computing systems. This can have a profound impact on fields such as data analysis, artificial intelligence, and scientific research by enabling faster and more reliable data access. Investing in PCM research through organizations like NSF is vital because this research has the potential to shape the future of computing, leading to faster and more energy-efficient systems with transformative applications that benefit society. This project aims to explore efficient computer algorithms and architecture for the design and implementation of PCM to fulfill the storage requirements of consumers. The main focus is on enhancing the reliability and durability of PCM technology, which serves as a crucial technology for non-volatile electrical data storage at the nanometer scale. This project tackles problems from both hardware and software perspectives. On the hardware side, all proposed solutions strive to improve the performance of a PCM main memory system while addressing concerns related to limited endurance, hard errors, and drift-induced soft errors. From a software standpoint, it involves operating system support for address translation from virtual memory addresses to physical addresses and from physical addresses to actual PCM addresses.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.