Microscopic transport model for real solar cell structures: Impact of structural disorder and defects on the charge carrier transport and dynamics in CuIn1-xGaxSe2

该项目旨在阐明Cu（In，Ga）Se 2薄膜的微观结构，并导出该半导体典型层的微观结构模型。微观结构模型描述了这种化合物半导体的局部光电特性，其特征在于高度的无序。该微观结构模型将通过模拟空间-时间-光谱分辨发光实验以及将在项目内进行的电荷载流子传输实验进行验证。模拟将采用三维有限元法。通过实验和模拟相结合的方法，明确无序对载流子输运的影响。由于无序将被普遍地考虑，这个项目的结果可以转移到其他物质系统。

The projects aims at elucidating the microstructure of thin films of Cu(In,Ga)Se2 and has the goal of deriving a microstructural model for typical layers of this semiconductor. The microstructural model describes the local optoelectronic properties of this compound semiconductor which is characterised by a high degree of disorder. This microstructural model will be verified by simulating spatial-time-spectral resolved luminescence experiments as well as experiments on the charge carrier transport which will be performed within the project. The simulation will employ the method of finite elements in 3-dimensions. By combining experiment and simulation the influence of disorder on the carrier transport shall be clearified. As disorder will be considered in generalised terms, the results of this project can be transferred to other material systems.