Materials World Network: Growth of nonpolar and semipolar GaN on Si and sapphire substrates and investigation of optical processes for high efficiency

材料世界网络：硅和蓝宝石衬底上非极性和半极性 GaN 的生长以及高效率光学工艺的研究

• 批准号: 222080600
• 负责人: Privatdozent Dr. Frank Bertram
• 金额: --
• 依托单位: Institut für Physik
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2012
• 资助国家: 德国
• 起止时间: 2011-12-31 至 2015-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/222080600?language=en
• 关键词: Materials; World; Network; Growth; nonpolar

The objective of this proposal is to investigate the fundamentals of nonpolar and semipolar GaN growth with the aim of understanding the mechanisms governing defect formation and impurity incorporation as well as processes responsible for radiative recombination. Insight into mechanisms responsible for the defect formation will make it possible to elaborate approaches for reducing defect density and produce the high-optical-quality material for light-emitting diodes and laser diodes with enhanced brightness. The lack of polarization in nonpolar GaN and substantially reduced polarization in semipolar GaN will allow higher recombination efficiencies and eliminate the dependence of emission energy on injection level. The choice of Si and sapphire substrates is motivated by their high quality and wide availability, particularly in the context of cost cutting practices in high brightness LEDs for lighting applications.

本提案的目的是研究非极性和半极性GaN生长的基本原理，目的是了解缺陷形成和杂质掺入的机制以及负责辐射复合的过程。对缺陷形成机制的深入了解将使人们有可能制定降低缺陷密度的方法，并生产用于发光二极管和激光二极管的高光学质量材料，提高亮度。非极性GaN中极化的缺乏和半极性GaN中极化的显著降低将允许更高的复合效率并消除发射能量对注入水平的依赖性。选择Si和蓝宝石衬底的动机是其高质量和广泛的可用性，特别是在用于照明应用的高亮度LED的成本削减实践的背景下。

项目成果

Impact of extended defects on optical properties of (1-101)GaN grown on patterned Si

扩展缺陷对在图案化 Si 上生长的 (1-101)GaN 光学性能的影响

• DOI: 10.1117/12.2040621
• 发表时间: 2014
• 作者: S. Okur;N. Izyumskaya;F. Zhang;V. Avrutin;S. Metzner;C. Karbaum;F. Bertram;J. Christen;H. Morkoç;Ü. Özgür
• 通讯作者: Ü. Özgür

Optical properties of m-plane GaN grown on patterned Si(112) substrates by MOCVD using a two-step approach

使用两步法通过 MOCVD 在图案化 Si(112) 衬底上生长的 m 面 GaN 的光学特性

• DOI: 10.1117/12.2037930
• 发表时间: 2014
• 作者: N. Izyumskaya;S. Okur;F. Zhang;M. Monavarian;V. Avrutin;Ü. Özgür;S. Metzner;C. Karbaum;F. Bertram;J. Christen;H. Morkoç
• 通讯作者: H. Morkoç

Depth distribution of carrier lifetimes in semipolar (11macron01) GaN grown by MOCVD on patterned Si substrates

在图案化 Si 衬底上通过 MOCVD 生长的半极性 (11macron01) GaN 中载流子寿命的深度分布

• DOI: 10.1117/12.2005514
• 发表时间: 2013
• 作者: N. Izyumskaya;S. Okur;F. Zhang;V. Avrutin;Ü. Özgür;S. Metzner;C. Karbaum;F. Bertram;J. Christen;H. Morkoç
• 通讯作者: H. Morkoç

Determination of carrier diffusion length in p- and n-type GaN

p 型和 n 型 GaN 中载流子扩散长度的测定

• DOI: 10.1117/12.2040645
• 发表时间: 2014
• 作者: S. Hafiz;S. Metzner;F. Zhang;M. Monavarian;V. Avrutin;H. Morkoç;C. Karbaum;F. Bertram;J. Christen;B. Gil;Ü. Özgür
• 通讯作者: Ü. Özgür

Determination of carrier diffusion length in GaN

• DOI: 10.1063/1.4905506
• 发表时间: 2015-01
• 期刊: Journal of Applied Physics
• 影响因子: 3.2
• 作者: S. Hafiz;Fan Zhang;M. Monavarian;V. Avrutin;H. Morkoç;Ü. Özgür;S. Metzner;F. Bertram;J. Christen;B. Gil