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Indium arsenic antimony (InAsSb) Quantum Dots for Mid-Infrared Lasers

Indium arsenic antimony (InAsSb) Quantum Dots for Mid-Infrared Lasers
用于中红外激光器的铟砷锑 (InAsSb) 量子点
批准号:
DP0774366
负责人:
A/Prof Wen Lei
金额:
$23.3万
依托单位国家:
澳大利亚
项目类别:
Discovery Projects
财政年份:
2007
资助国家:
澳大利亚
项目状态:
已结题
起止时间:
2007-06-04 至 2010-06-03

项目摘要

项目成果

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中文摘要
翻译
这将为中红外激光器件的研究开辟一个新的领域。该项目的任何成果都将使国家安全、环境监测和光谱学等各个学术界和工业界受益。这项研究的成果可以创造新一代高性能中红外激光器,并使澳大利亚研究人员处于该领域发展的前沿。
英文摘要
This proposal will open a new area of research for mid-infrared laser devices. Any achievement from this project will benefit various academic and industrial communities, such as national security, environmental monitoring and spectroscopy. The outcomes of this research could create a new generation of high-performance mid-infrared lasers and put Australian researchers in the forefront of the development in this field.
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Defect generation in hetero-epitaxy on lattice mismatched substrates
  • 批准号:
    DP200103188
  • 项目类别:
    Discovery Projects
  • 资助金额:
    $34.69万
  • 财政年份:
    2020
  • 负责人:
    A/Prof Wen Lei
  • 依托单位:
HgCdSe: A novel II-VI semiconductor material for next generation infrared technologies
  • 批准号:
    FT130101708
  • 项目类别:
    ARC Future Fellowships
  • 资助金额:
    $52.47万
  • 财政年份:
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  • 负责人:
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  • 依托单位:
海外基金