Scalable High Performance 1D Metal-Insulator-Graphene Diodes for High Frequency Applications Based on 2D Materials from Chemical Vapor Deposition

在该项目中，将开发一种基于二维材料的新型高性能一维金属绝缘体-石墨烯（MIG）二极管和相应的可扩展工艺。金属层、绝缘体层和石墨烯层将横向排列。石墨烯-绝缘体结将在石墨烯的一维边缘形成。与基于薄膜技术的二极管（即传统的垂直金属-绝缘体-金属（MIM）二极管）相比，这种1D二极管几何结构的主要优点之一是降低了电容。此外，在这种一维几何结构中，电流密度要高得多。这两个优点确保了1D二极管是未来太赫兹应用的一个非常有前途的候选者，因为它的推导电阻-电容（RC）产品很低。为了进一步提高二极管的性能，单层石墨烯将被封装在两个六方氮化硼（hBN）层之间。由于与石墨烯相似的六边形结构以及与石墨烯的弱范德华相互作用，hBN层保留了石墨烯的高迁移率。hBN还适当地将石墨烯与环境隔离开来，这对于器件和电路的长期稳定性至关重要。为了实现一维二极管的大规模工艺，将利用化学气相沉积（CVD）来生产石墨烯和hBN这两种二维材料。这些二维材料的质量决定了二极管的高性能。因此，需要深入研究二维材料CVD生长的科学问题，然后根据器件性能进行解决。为了展示该二极管的应用潜力，本项目还将展示用于高频应用的大规模高性能1D二极管，如射频功率检测或光检测。

Within this project a novel high performance 1D metal-insulator-graphene (MIG) diode based on 2D materials and a corresponding scalable process will be developed. The metal, insulator, and graphene layers will be arranged laterally. The graphene-insulator junction will be formed at the 1D edge of the graphene. One of the main advantages of this 1D diode geometry is the reduced capacitance compared to the state-of-the-art for thin-film technology based diodes, i.e. conventional vertical metal-insulator-metal (MIM) diodes. Besides, the current density in such a 1D geometry is much higher. These two advantages ensure that the 1D diode is a very promising candidate for future terahertz applications because of the low derived resistance-capacitance (RC) product.To further improve the performance of the diode, the monolayer graphene will be encapsulated between two hexagonal boron nitride (hBN) layers. The hBN layer preserves the high mobility of graphene due to nature of the similar hexagonal structure as graphene and the weak van der Waals interaction with graphene. hBN also properly isolates graphene from the environment, which is critical for the long term stability of the devices and circuits.To realize the large scale process for the 1D diode, chemical vapor deposition (CVD) will be utilized to produce both of the 2D materials, graphene and hBN. The quality of these 2D materials determines the delivery of the high performance of the diode. Therefore the scientific problems for CVD growth of 2D materials will need to be intensively investigated and afterwards solved with alignment to the device performance. To show the application potential of such diode, the large scale high performance 1D diodes for high frequency application, such as radiofrequency power detection or photo detection, will also be demonstrated within this project.