Development of Blue-Emitting EL devices with High Color-Purity and Brightness
Development of Blue-Emitting EL devices with High Color-Purity and Brightness
批准号:
01850006
负责人:
KUKIMOTO Hiroshi
金额:
$12.93万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Developmental Scientific Research
财政年份:
1989
资助国家:
日本
项目状态:
已结题
起止时间:
1989 至 1991
中文摘要
本研究以金属有机分子束沉积法(MOMBD)生长的掺Tm的ZnS为材料,研制高色纯度和高亮度的蓝色电致发光器件。研究结果总结如下。首次以二乙基锌和二乙基硫或硫化氢为锌源和硫源,以元素Tm为掺杂剂,采用MOMBD技术在GaAs和玻璃衬底上成功生长了掺Tm的ZnS薄膜.生长的薄膜显示出蓝色光致发光,这归因于Tm^<3+>离子内的f-f跃迁。研究了Tm^<3+> inos的跃迁过程,并与薄膜和粉末样品的结果进行了比较。光致发光和电致发光测量表明,Tm^<3+>离子的主要激发过程不是由热电子直接激发,而是由ZnS基质的能量转移间接激发.为了提高蓝光发射和激发效率,设计了Tm调制掺杂的电致发光器件发光层。根据第2.4节中描述的结果,对结构的参数进行了优化。ZnS:用MOMBD生长了由δ掺杂层组成的Tm层,发现其发光特性取决于掺杂参数,δ掺杂Tm的片浓度和相邻片之间的距离。How13EA\:二次离子质谱测量已经表明,δ掺杂层的深度分布对于本发明目的而言不够陡峭。所观察到的浓度展宽还有待于详细研究以进一步改善13 EAl:n的不稳定性。
英文摘要
This research aims at the development of blue-emitting electroluminescence(EL)devices with high color-purity and brightness based on Tm-doped ZnS grown by metalorganic molecular beam deposition (MOMBD). The results of the study are summarized below.1. Tn-doped ZnS films have been successfully grown on GaAs and glass substrates by MOMBD, for the first time, using diethylzinc and diethyl sulfide or hydrogen sulfide as Zn and S sources and elemental Tm as the dopant.2. The grown films have shown blue photoluminescence which is ascribed to the f-f transitions within Tm^<3+> ions. The transition processes in Tm^<3+> inos were investigated and compared with the results of film and powder samples. Photoluminescence a13EA\ : nd electroluminescence measurements have indicated that the dominant excitation process of Tm^<3+> ions would be not a direct excitation by hot electrons but an indirect excitation by energy transfer from the ZnS matrix.3. The light-emitting layr with Tm-modulation-doped structures for EL devices have been designed for improving the efficiencies of blue emission and excitation. The parameters of the structure have been optimized the basis of the result described i13EA\ : n section 2.4. ZnS : Tm layrs consisting of delta-doped layrs have been grown by MOMBD.It has been found that the luminescence properties depend on the doping parameters, e.g., sheet concentration of delta-doped Tm and distance between the adjacent sheets. How13EA\ : ever, secondary ion mass spectroscopy measurements have shown that depth profile of delta-doped layrs was not abrupt enough for the present purpose. The observed concentration broadening is yet to be investigated in detail for further improvement i13EA\ : n the abruptness.
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Kyoji Dantani: "MOMBE Growth of Tm-Doped ZnS Films" Journal of Electronic Materials. (投稿中).
Kyoji Dantani:“Tm 掺杂 ZnS 薄膜的 MOMBE 生长”《电子材料杂志》(进行中)。
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通讯作者:
K.Hara, H.Machimura, K.Dantani, J.Yoshino and H.Kukimoto: "MOMBE Growth of ZnS : Tm Films" 8th Meeting of EL Division, 125 Committee, Japan Society for Promotion of Science. 14-19 (1992)
K.Hara、H.Machimura、K.Dantani、J.Yoshino 和 H.Kukimoto:“ZnS 的 MOMBE 生长:Tm 薄膜”日本科学振兴会 125 委员会 EL 部门第 8 次会议。
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K.Dantani,K.Hara,H.Machimura,J.Yoshino and H.Kukimoto: "MOMBE Growth of Tm-Doped ZnS Films" Journal of Electronic Materials.
K.Dantani、K.Hara、H.Machimura、J.Yoshino 和 H.Kukimoto:“Tm 掺杂 ZnS 薄膜的 MOMBE 生长”电子材料杂志。
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K.Dantani, K.Hara, H.Machimura, J.Yoshino and H.Kukimoto: "MOMBE Grouth of Tm-Doped ZnS Films" J.Electron.Mater. (submitted).
K.Dantani、K.Hara、H.Machimura、J.Yoshino 和 H.Kukimoto:“Tm 掺杂 ZnS 薄膜的 MOMBE Grouth”J.Electron.Mater。
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K.Hara,S.Tominaga,K.Dantani,J.Yoshino and H.Kukimoto: "MOCVD Growth of ThuliumーDoped Zinc Sulfide" Jpn.J.Appl.Phys。.
K. Hara、S. Tominaga、K. Dantani、J. Yoshino 和 H. Kukimoto:“掺铥硫化锌的 MOCVD 生长”Jpn.J.Appl.Phys。
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共 9 条
Advanced Science and Technology for Semiconductor Materials and Devices
-
批准号:06044077
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项目类别:Grant-in-Aid for international Scientific Research
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资助金额:$1.15万
-
财政年份:1994
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负责人:KUKIMOTO Hiroshi
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依托单位:
Advanced Science and Technology for Semiconductor Materials and Devices
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批准号:05044206
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项目类别:Grant-in-Aid for Overseas Scientific Survey.
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资助金额:$0.0万
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财政年份:1993
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负责人:KUKIMOTO Hiroshi
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依托单位:
Selective area growth of compound semiconductors induced by electron-beam irradiation
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批准号:03402023
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项目类别:Grant-in-Aid for General Scientific Research (A)
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资助金额:$16.77万
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财政年份:1991
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负责人:KUKIMOTO Hiroshi
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依托单位:
海外基金