Advanced Science and Technology for Semiconductor Materials and Devices

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The project aims at the promotion of cooperative research efforts between Japan and Korea in the area of advanced science and technology for semiconductor materials and devices. Research subjects were selected based on the achievements of the last year, covering various semiconductor materials (e.g., SiGe, GaAsP,ZnCdSe) and related quantum structures. Tasks of research were divided into materials preparation, physical evaluation, and device fabrication. Main achievements and activities are summarized as follows.1. Achievements(1) A study of preparation of porous Si using HF solution reveals that the dimensions of holes of porous Si were strongly influenced by the surface oxide layr.(2) Epitaxy of Si and SiGe by ECR plasma CVD has been investigated. Dislocation-free high quality epilayrs were obtained by controlling DC bias and optimizing substrate temperatures.(3) Optical properties of GaAsP/GaP strained quantum wells has been studied. Band offsets at the heterointerface has been determined.(4) Magneto-optical behavior of ZnSe under an ultra-high magnetic field has been investigated. Effective mass of carrier has been determined by polaron effect.2. Activities(1) Japan-Korea Joint Symposium on Advanced Science and Technology for Semiconductor Materials and Devices was held in June 1994 at Cheju, Korea with 8 Japanese and around 60 Korean participants. Topics of common research interests were presented and discussed.(2) Japanese 3 investigators visited Korea in February 1995 to discuss the achievements of the project.(3) Korean 3 investigators were invited to Japan in March 1995 6o prepare the summary of the project. Future directions have also been discussed.In summary, the purpose of the project has been successfully accomplished, with cooperative research efforts and mutual academic exchange.