Simulation of spatially resolved carrier dynamics intwo-dimensional semiconductors induced by optical excitation

该项目的中心目标是深入了解在超短时间和长度尺度上作用的二维半导体中的空间分辨载流子动力学。由于纳米制造的最新进展，像过渡金属二硫族化合物这样的二维半导体现在很容易获得。我们计划促进考虑不同散射机制和不同维度的过渡金属二硫化物的时空分辨量子动力学的理论描述。特别是，我们打算使用最近开发的Lindblad超算子形式来分析从二维状态到局部势的载流子捕获。第二个重点将是光-物质相互作用和光场动力学在纳米尺度。为此，我们计划使用时域有限差分模拟来研究耦合到半导体的光场的空间分辨动力学。我们的目的是在相同的基础上描述半导体中的光场动力学和载流子动力学。我们的动力学研究将支持和指导二维半导体的未来应用。

The central goal of the project is to obtain an in-depth understanding of the spatially resolved carrier dynamics in two-dimensional semiconductors acting on ultra-short time and length scales. Two-dimensional semiconductors like the transition metal dichalcogenides are now easily accessible due to recent advances in nanofabrication. We plan to promote the theoretical description of the spatio-temporally resolved quantum dynamics in transition metal dichalcogenides accounting for different scattering mechanisms and different dimensionalities. In particular, we intend to analyse the carrier capture from two-dimensional states into a localized potential using a recently developed Lindblad superoperator formalism. A second focus will be on the light-matter interaction and the light-field dynamics on the nanoscale. For this, we plan to study the spatially resolved dynamics of the light field coupled to the semiconductor using finite difference time-domain simulations. We aim to describe the light field dynamics and the carrier dynamics in the semiconductor on the same footing. Our studies on the dynamics will support and guide the future applications of two-dimensional semiconductors.