Chemical Routes to CuI and Related Compounds as Thin Films and Bulk Material

碘化铜(CuI)是一种具有大禁带和高空穴电导率的p型半导体，同时CuI在可见光范围内是透明的。因此，关于它在(透明)电子学中的应用，目前人们对作为薄膜的p型CuI非常感兴趣。在2857研究组内，该项目的重点是制备CuI薄膜和单晶的各种化学合成方法。随着对层的均匀性和表面形貌的优化，通过掺杂和与相关化合物形成固溶体来定向控制材料性能的研究正在推进。通过金属-有机化学气相沉积(MOCVD)和近距离升华(CDS)的不同可能性来研究材料性质控制的薄膜形成。基础研究包括掺杂源、衬底、生长过程中的合成条件和后处理对所获得的晶态和外延CuI薄膜的光学、电学和力学性能的影响。为了比较研究无应变掺杂CuI单晶以及CuI基混晶。通过结合不同的工艺和材料，将研究基于CuI的特定p-n结的制备。

Copper(I) iodide (CuI) is a p-type semiconductor with a large band gap and high (hole) conductivity, at the same time CuI is transparent in the visible spectral range. Therefore, with respect to its use in (transparent) electronics, there is currently great interest in p-type-CuI as thin films. Within the Research Unit FOR 2857, the focus of this project is on various chemical synthesis routes for the preparation of thin films as well as single crystals of CuI. In line with the optimization of layer homogeneity and surface morphology, investigations on the targeted control of material properties by doping and solid solution formation with related compounds are being advanced. Thin film formation with control of material properties will be studied by the different possibilities of metal-organic chemical vapor deposition (MOCVD) and close-distance sublimation (CDS). Fundamental investigations concern the influence of dopant sources, substrate, synthesis conditions during the growth process and post-treatment on optical, electrical and mechanical properties of the obtained crystalline and epitaxial CuI thin films. For comparative studies of strain-free doped CuI single crystals as well as CuI-based mixed crystals will be grown. By combining the different processes and materials, the fabrication of defined p-n junctions based on CuI will be investigated.