RIE/ICP Ion etching tool

需要一种等离子刻蚀工具来制备钻石和其他半导体的纳米结构。目前，Osnabrück大学缺乏这样的工具。钻石纳米结构(梁、柱等)可以显著提高钻石中NV色心的光输出，这些色心被用作邻近电子自旋系统的量子传感器。这种系统可能是在现场生产的面体内富勒烯，用于信息处理的量子比特，或者是能够在生物环境中进行局部结构阐明的自旋标记分子。进一步的自旋携带分子或无机体系--例如，稀土掺杂纳米粒子--也可以用这种方法来研究。基于单独接触碳纳米管的硅芯片的场效应晶体管正在被积极地研究。干法蚀刻协议将允许将这项研究扩展到定制单个纳米管设备，允许在几个工艺步骤中应用通用标记结构来识别设备。该部门正在通过超清洁工艺沉积超薄磁性氧化物。利用等离子体刻蚀的这种层的横向图案化在经典自旋电子学中开辟了新的可能性，例如通过设计天电子学结构，但也仅仅通过将氧化物集成在接触结构中，例如对于CNT-FET器件，其中它们可以用作自旋过滤材料。作为一种“自上而下”的方法，等离子体刻蚀是对纳米结构“自下而上”方法的理想补充，而“自下而上”方法是中性化学材料研究所(Institut für Chemie Neuer MateriAllen)深入研究的一种方法(例如，阳极氧化铝、嵌段共聚物)。这两种方法的结合扩大了可以实现的纳米结构的范围，例如，通过使用大规模和高保真的创新工艺复制精确但昂贵的自上而下的母体结构。刻蚀工具最终将允许对湿法化学处理的纳米结构进行非常好的表面控制，包括钝化或功能修饰。举个例子，这对于优化稀土上转换或LiNbO_3基纳米粒子的光学性质是很重要的。

A plasma etching tool is requested that will serve to prepare nanostructures of diamond and other semiconductors. Such a tool is presently lacking at the Universität Osnabrück.1. Diamond nanostructures (beams, pillars, etc.) can dramatically enhance the light output of NV color centers in diamond, which are used as quantum sensors for adjacent electron spin systems. Such systems may be endohedral fullerenes, which are produced on site and intended for use as quantum bits for information processing, or spin-labelled molecules that enable local structure elucidation in biological environments. Further spin carrying molecular or inorganic systems — e.g., rare-earth doped nano-particles — can also be investigated with this method.2. Field-effect transistors based on silicon chips with individually contacted carbon nanotubes are actively being investigated. Dry etching protocols would allow to extend this research to tailor individual nanotube devices, by allowing the application of universal marker structures for identifying devices across several processing steps.3. Ultrathin magnetic oxides are being deposited via ultra-clean processes at the department. Lateral patterning of such layers with plasma etching opens new possibilities in classical spintronics, e.g., by engineering skyrmionic structures, but also just by integrating the oxides in contact structures, e.g., for CNT-FET devices where they may serve as spin filter materials.4. Plasma etching as a "top-down" method is an ideal complement to "bottom-up" methods of nano-structuring, which are intensely studied at the Institut für Chemie neuer Materialien (e.g. anodic aluminum oxide, block-copolymers). A combination of both approaches enlarges the spectrum of nanostructures that can be realized, e.g., by replicating precise but costly top-down master structures using innovative processes on a large scale and with high fidelity.5. The etching tool will finally allow very good surface control of wet-chemically processed nano structures, including passivation or functional modifications. This is important, to give an example, to optimize the optical properties of rare-earth upconversion or LiNbO3-based nano-particles.