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ICP RIE Etching

ICP RIE Etching
ICP RIE 蚀刻
批准号:
536792788
负责人:
金额:
$0.0万
依托单位国家:
德国
项目类别:
Major Research Instrumentation
财政年份:
2024
资助国家:
德国
项目状态:
未结题
起止时间:
2023-12-31 至 --
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中文摘要
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英文摘要
Chip processing of Si and GaN-based devices is one of the key unique competences of the Institute of Semiconductor Technology (IHT). This technology is of great importance for the fabrication of micro-opto-electro-mechanical systems and the research of novel sensor and actuator elements. For these objectives, the precise, reproducible processing of dielectrics, e.g. for lateral structuring of wafers or processing as integrated dielectrics for photonic modules, is of fundamental importance. Often the combination of high aspect ratio, high sidewall quality and precise nanostructure generation determines the requirement profile. Also for photonic systems, high aspect ratios as well as outstanding surface quality and structural fidelity are prerequisites for the fabrication of functional elements, which can only be achieved by ICP-RIE processes (inductively coupled plasma reactive ion etching).
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RIE修饰NiCr天线增强微桥结构太赫兹波吸收性能研究
  • 批准号:
    61501092
  • 项目类别:
    青年科学基金项目
  • 资助金额:
    23.0万元
  • 批准年份:
    2015
  • 负责人:
    苟君
  • 依托单位: