ICP RIE Etching

ICP RIE 蚀刻

• 批准号: 536792788
• 金额: --
• 依托单位: Technische Universität Braunschweig
• 依托单位国家: 德国
• 项目类别: Major Research Instrumentation
• 财政年份: 2024
• 资助国家: 德国
• 起止时间: 2023-12-31 至 无数据
• 项目状态: 未结题
• 来源: https://gepris.dfg.de/gepris/projekt/536792788?language=en
• 关键词: ICP; RIE; Etching

Chip processing of Si and GaN-based devices is one of the key unique competences of the Institute of Semiconductor Technology (IHT). This technology is of great importance for the fabrication of micro-opto-electro-mechanical systems and the research of novel sensor and actuator elements. For these objectives, the precise, reproducible processing of dielectrics, e.g. for lateral structuring of wafers or processing as integrated dielectrics for photonic modules, is of fundamental importance. Often the combination of high aspect ratio, high sidewall quality and precise nanostructure generation determines the requirement profile. Also for photonic systems, high aspect ratios as well as outstanding surface quality and structural fidelity are prerequisites for the fabrication of functional elements, which can only be achieved by ICP-RIE processes (inductively coupled plasma reactive ion etching).

硅和氮化镓基器件的芯片加工是半导体技术研究所（IHT）的关键独特能力之一。该技术对微光机电系统的制作和新型传感器、驱动器元件的研究具有重要意义。对于这些目标，精确的、可再现的光刻胶处理，例如用于晶片的横向结构化或作为用于光子模块的集成光刻胶处理，是至关重要的。通常，高纵横比、高侧壁质量和精确的纳米结构生成的组合决定了要求轮廓。同样对于光子系统来说，高纵横比以及出色的表面质量和结构保真度是功能元件制造的先决条件，这只能通过ICP-RIE工艺（电感耦合等离子体反应离子蚀刻）实现。