HAR/Nano-ICP Dry Etching Process Unit

ICP干法刻蚀技术是一种基本的硅微加工方法。蚀刻工艺是各向异性的，并且能够产生具有几乎任何形状和大部分垂直侧面的沟槽、孔和凹部。ICP干法刻蚀技术与各向异性湿法化学刻蚀技术（刻蚀速率取决于晶面）相结合，为硅微机械结构的设计提供了非常丰富的多样性。硅体微机械是IMT的中心课题，在几乎所有的研究项目中发挥着重要作用。然而，1995年购买的ICP干法蚀刻系统现在已经受到无法修复的损坏，完全失效。此外，关于最小结构宽度、纵横比、精确可调且均匀的蚀刻深度以及侧面角的正交性的要求显著增加。此外，现代RIE/DRIE蚀刻系统在使用抗蚀剂掩模、强大的ICP源、集成的工艺冷却和快速进样和出样时具有高选择性。此外，非常快速的气体变化有利于垂直的结构侧面和侧面与蚀刻地面之间尽可能垂直的过渡。为了利用最先进的工业技术成功地开展当前和计划中的研究项目，必须采购一套现代化的高性能HAR/Nano-ICP干法蚀刻系统，以满足不断增长的需求。

The ICP dry etching technique is a basic microfabrication method for silicon. The etching process is anisotropic and enables to create trenches, holes and recesses with almost any shape and largely vertical flanks. Together with the anisotropic wet chemical etching technique, where the etching rate is oriented to the crystal planes, ICP dry etching offers a very high design variety for micromechanical structures made of silicon.Silicon bulk micromechanics is a central topic at IMT, which plays a major role in almost all research projects. However, the ICP dry etching system purchased in 1995 has now been irreparably damaged and has failed completely. In addition, the requirements regarding the minimum structure width, the aspect ratio, an exactly adjustable and uniform etching depth and the orthogonality of the flank angle have increased significantly. Furthermore, modern RIE/DRIE etching systems offer high selectivity when using resist masks, powerful ICP sources, integrated process cooling and fast sample infeed and outfeed. Vertical structural flanks and a transition as perpendicular as possible between the flanks and the etching ground are favored, among other things, by a very fast gas change. In order to carry out current and planned research projects successfully and with state-of-the-art industrial technology, it is therefore essential to procure a modern, high-performance HAR/Nano-ICP dry etching system that meets the increased requirements.