Study on microstructure and properties of micro-composite-type inorganic films.

采用反应溅射和等离子体CVD等非平衡反应方法制备了固体电解质、涂层材料、光电材料和超导体等无机材料的薄膜。研究了它们的性能、微观结构和杂交性能之间的关系。固体电解质：(I)在石英玻璃衬底上直接加碘制备的β-AgI薄膜具有比块体β-AgI高2个数量级的高离子电导率。(2)用等离子体CVD法制备了c面平行于薄膜的TiS_2薄膜，在锂电池上观察到了出乎意料的大容量放电。金属氮化物膜：(1)采用射频溅射法制备了TiN-AlN系新型混晶薄膜。他们的带隙。根据成分在0-5.2 eV的范围内变化，薄膜的抗氧化性得到了显著提高。(2)采用反应溅射法制备了MON-T_mN(T_mN=Ti，Zr，Nb)系混晶薄膜。确定了体系中NaCl型和WC型结构的稳定区是价电子数和金属与氮原子半径比的函数。根据XPS和空穴效应测量的结果，阐明了它们的电子结构。在富NO组分区新获得的WC型混晶具有超导电性，T_c高达11-15K。超导氧化物薄膜：在YBa2Cu3Oy薄膜中加入氟，在900ﾟC以上强烈促进了YBCO晶体的板状生长和c面平行于薄膜的择优取向。

The thin films of inorganic materials such as solid electrolytes,coating materials ,opto-electronic materials and superconductors were prepared using non-equilibrium reaction processes, e.g. reaction sputtering and plasma CVD methods. The relationships among their properties, microstructure and hybridization were investigated as follows.1 . Solid electrolyte: (i) The beta-AgI film prepared by direct iodization of the thin Ag film on the silica glass substrate exhibited high ionic conductivity larger by 2-order than that of bulk beta-AgI. (ii)TiS_2 films with the c-plane parallel to the film was fabricated by plasma CVD, and unexpectedly large discharge capacity was observed on a Li battery.2. Metal nitride films: (i)New mixed crystal films in the TiN-AlN system were prepared by rf-sputtering. Their band gap. varied in a range from 0 to 5.2eV corresponding to the composition, and durability against oxidation for the films was intensively improved. (ii) The mixed crystal films of the MoN-T_MN (T_MN= Ti,Zr,Nb) systems were prepared by a reaction sputtering. Stability regions of NaCl-type and WC-type structures in the systems were determined as functions of the number of valence electron and the atomic radius ratio of metal to nitrogen. Their electronic structure was elucidated on the basis of the results of XPS and hole effect measurements. The newly obtained WC-type mixed crystals in the No-rich composition region exhibited superconductivity with T_c as high as 11 - 15K .3 . Superconducting oxide film: Fluorine addition to YBa_2CU_3O_y film intensively enhanced both platy YBCO crystal growth above 900ﾟC and preferred orientation with the c-plane parallel to the film.