Nanolithography system

我们建议的目的是在罗斯托克大学物理研究所建立一个多功能和灵活的纳米光刻基础设施。该系统的主要用途是将各种纳米结构与二维晶体和货车德瓦尔斯异质结构相结合。这些新的材料系统具有迷人的电子和光学特性。进入纳米光刻将使我们能够定制这些系统的属性，从通过定义种子粒子控制层生长和通过确定性制备纳米天线控制光-物质相互作用到通过纳米结构接触集成到设备中。对于我们计划的活动，我们需要一个灵活的基础设施来定义不同长度尺度的结构。一方面，等离子体天线、与二维晶体的纳米结构接触、种子颗粒和用于引入局部应变的结构需要30 nm或更小的横向分辨率。另一方面，我们需要定义宏观接触区域和具有从10微米到毫米的结构尺寸的标记，其必须沉积在基板的大面积上。此外，我们的计划将需要光刻限定的结构相对于已经存在于衬底上的二维晶体和异质结构的精确对准，所述二维晶体和异质结构由于制造方法而具有独特的尺寸和形状。因此，光刻系统还必须允许现有结构的高分辨率成像，这应该独立于光刻工艺。

The aim of our proposal is the setup of a versatile and flexible infrastructure for nanolithography at the institute for Physics of Rostock university. The main use of the proposed system is the combination of various nanostructures with two-dimensional crystals and van der Waals heterostructures. These novel material systems have fascinating electronic and optical properties. Access to nanolithography will enable us to tailor the properties of these systems, ranging from control of layer growth by definition of seed particles and control of light-matter-interaction via deterministic preparation of nano-antennae up to integration into devices by nanostructured contacts.For our planned activities, we require a flexible infrastructure for definition of structures on vastly different length scales. On one hand, plasmonic antennae, nanostructured contacts to two-dimensional crystals, seed particles and structures for introducing local strain require a lateral resolution of 30 nm or less. On the other hand, we need to define macroscopic contact regions and markers with structure sizes from 10 microns up to millimeters, which have to be deposited on large areas of a substrate.Additionally, our plans will require a precise alignment of the lithographically defined structures relative to two-dimensional crystals and heterostructures already present on a substrate, which have unique sizes and shapes due to the fabrication method. Therefore, the lithography system must also allow for high-resolution imaging of existing structures, which should be independent of the lithography process.