Influence of Energy Beam Irradiation to Dielectric Thin Film Growth Process.

采用双离子束溅射(IBS)法和电子回旋共振(ECR)溅射法在薄膜生长表面辐照制备了介电薄膜。选择了AIN和金刚石薄膜作为介质薄膜，采用离子束辐照Al金属靶的方法在薄膜生长表面制备了AIN薄膜。另一方面，以碳靶为原料，采用ECR溅射法制备了金刚石薄膜，并用XPS、X射线衍射仪、分光光度计和原子力显微镜(AFM)对薄膜的物理性能和表面形貌进行了表征。结果表明：(1)合成的AIN薄膜的光学性能主要取决于氮离子辐照能量，晶体取向主要取决于氮离子的照射角度。(2)合成的类金刚石(DLC)薄膜的电导率和光学透明度主要取决于等离子体气体中氧的含量。当氧含量在20mol%以上时，在玻璃衬底上合成的DLC薄膜为绝缘体，在600 nm处的透光率在80%以上。类金刚石薄膜的折射率在2.4以上，与天然金刚石的折射率基本一致，在衬底温度为4 0ﾟC和6 0 0ﾟC时合成的类金刚石薄膜的晶体尺寸分别约为2 0 nm和2 2 0 nm。(3)从原子力显微镜对薄膜表面形貌的观察结果可以解释薄膜的生长过程是在成核和生长过程中进行的。

Dielectric thin films were synthesized with irradiation an energy beam to the film growth surface by dual ion beam sputtering (IBS) method and electron cyclotron resonance (ECR) sputtering method. AIN and Diamond thin films were chosen as the dielectric thin films.AIN thin films were synthesized with irradiation nitrogen ion beam to the film growth surface using Al metal target with IBS method. On the other hand, the diamond thin films were synthesized from carbon target using ECR sputtering method.The physical characteristic and surface morphology of the synthesized films were evaluated with XPS,XRD,spectrophotometer and atomic force microscope (AFM).The results are as follows,(1) The optical characteristic of the synthesized AIN films depended mainly on the energy of irradiation nitrogen ion, and crystal orientation depended on the irradiation angle of the nitrogen ion beam.(2) The electric conductivity and the optical transparency of the synthesized diamond-like carbon (DLC) films depended mainly on oxygen contents in plasma gas. The DLC films synthesized on the glass substrate at the oxygen content above 20mol% were insulator in electrical conductivity and had above 80% in transparency at 600nm light. The refractive index of the DLC films was above 2.4, the value is corresond to natural diamond.The crystal size of synthesized DLC films at substrate temperature 400ﾟC and 600ﾟC is about 20nm and 220nm respectively.(3) From the observation results of the surface morphology with AFM,the growth process of the films can be explained in the nucleation and the growth process.