Spin based three terminal device using magnetic semiconductor/non-magnetic semiconductor hybrid structures

我们发现自旋弛豫在窄InGaAs线中被抑制。此外，通过InGaAs导线顶部的栅极电压控制自旋轨道相互作用，可以大大提高自旋弛豫长度。我们已经证实磁性半导体gamna的磁各向异性可以通过使其线宽变窄来人为地引入。制备的GaMnAs双通道势垒晶体管在特定偏置条件下显示出电流增益（=校正电流/基极电流）。

We have found that spin relaxation is suppressed in narrow InGaAs wires. Furthermore, the spin relaxation length is much enhanced by controlling spin-orbit interaction through gate voltage on top of the InGaAs wires. We have confirmed that magnetic anisotropy of magnetic semiconductor GaMnAs can be artificially introduced by making its wire-width narrower. A fabricated GaMnAs double-tunnel-barrier transistor has shown a current gain (=corrector current/base current) under particular bias condition.