Research about the method of measuring the ultra thin film and the plasma reaction under film growth using optical waveguides
Research about the method of measuring the ultra thin film and the plasma reaction under film growth using optical waveguides
批准号:
09555132
负责人:
KATO Isamu
金额:
$4.99万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
1997
资助国家:
日本
项目状态:
已结题
起止时间:
1997 至 2000
中文摘要
利用CVD设备在裸露铁芯的结构的多模光纤传感器上沉积了约10 nm厚的薄膜,随着时间的推移,685~800 nm波长的透射光强度逐渐变小,并在约600秒内饱和,此外,为了提高传感器的灵敏度,需要加长传感器部分或使其变薄。然后,采用芯层厚度比前者薄7微米×6微米的嵌入式三维波导作为传感器,测量了a-Si:H薄膜的光学物理性能。从而得到了与常规光纤和常规平板光波导作为传感器时具有相同趋势的吸收光谱。在得到吸收光谱的基础上,当被问及在波导上沉积的a-Si:H薄膜的光能带隙时,得到了约1.70-1.72[eV]的值,而与波导长度无关。这与传统的测量方法得到的值基本一致。此外,当在直径为110im的光纤中将传感器长度设置为50[mm]时,由于吸收量变得不足而导致的测量极限为a-Si:H厚度50[nm]。通过所介绍的测量系统,当传感器长度设置为50[mm]时,由于a-Si:H厚度为3[nm],因此能够达到提高大灵敏度的目的。由于它不同于平板波导,它是三维波导,所以用有限元方法进行了高精度的分析。
英文摘要
The thin film of about 10 nm of thickness was made to deposit on the multimode optical fiber sensor of the structure which exposed the core using CVD equipment, and with time progress, transmitted light intensity with a wavelength of 685-800 nm became small, and was saturated in about about 600 seconds.Moreover, in order to raise the sensitivity of a sensor, it is necessary to lengthen a sensor part or to make it thin. Then, the embedded type 3-dimensional waveguide with a 7micrometerx6micrometer core thinner than the former is used as a sensor and the optical physical-properties value of an a-Si : H film was measured. Consequently, the absorption spectrum with the same tendency as the case where a conventional optical fiber and conventional slab waveguide are used as a sensor was obtained. It carried out based on the absorption spectrum obtained here, and when asked for the optical energy band gap of the a-Si : H film made to deposit on a waveguide, the value about 1.70-1.72 [eV] was acquired irrespective of waveguide length. This is mostly in agreement with the value acquired by the conventional measuring method. Moreover, the measurement limit resulting from the amount of absorption becoming inadequate was a-Si : H thickness 50 [nm], when sensor length was set to 50 [mm] in the optical fiber of the diameter 110 im of a core. By the introduced measurement system, since it was a-Si : H thickness 3 [nm] when sensor length set to 50 [mm], improvement in large sensitivity is able to be aimed at. Since it is the 3-dimensional waveguide unlike slab waveguide, analysis by the finite element method with high accuracy is performed.
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I. Kato et al: "In situ Measurement of Optical Constant of Ultra Thin Films Using Optical Fiber Sensor"SPIE Proceedings. Vol. 2997. (1997)
I. Kato 等人:“使用光纤传感器原位测量超薄膜的光学常数”SPIE 论文集。
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加藤勇: "三次元光導波路を用いた半導体極薄膜の光学定数の測定(II)"第61回応用物理学会学術講演会予稿集. 873-873 (2000)
加藤勇:“使用三维光波导测量超薄半导体薄膜的光学常数(II)”第61届日本应用物理学会年会记录873-873(2000)。
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加藤 勇: "二重管式同軸線路形MPCVD装置によるa-Si:H/SiN多層膜の作製" 第59回応用物理学会学術講演会予稿集. 2. 829-829 (1998)
加藤勇:“使用双管同轴线型 MPCVD 设备制备 a-Si:H/SiN 多层膜”第 59 届日本应用物理学会年会论文集 2. 829-829 (1998)。
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Isamu Kato: "Silicon Oxynitride Waveguide for Optoelectronic Integrade Circuits" Japanese Journal of Applied Physics.Vol.36. 6711-6713 (1997)
Isamu Kato:“用于光电集成电路的硅氮氧化物波导”日本应用物理学杂志.Vol.36。
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I. Kato et al: "Film Quality Of a a-Si : H/Si3N4 Multilyer Films And Propagate Properties Of Optical Waveguides Using The Multilayer Films"Proceedings of The 18th Symposium on Plasma Processing. 428-429 (2001)
I. Kato 等人:“a-Si : H/Si3N4 多层膜的薄膜质量和使用多层膜的光波导的传播特性”第 18 届等离子体处理研讨会论文集。
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共 39 条
ナノクリスタルドープ光導波路及び次世代フォトニックデバイスへの適用
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批准号:09305021
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$22.46万
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财政年份:1997
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负责人:KATO Isamu
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依托单位:
Study of Film Growth Mechanism and Development of Coaxial Line Type MPCVD System with Longitudinal Magnetic Field
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批准号:07650383
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$1.28万
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财政年份:1995
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负责人:KATO Isamu
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依托单位:
海外基金