Epitaxial growth of Si on Insulator using Ion Beam Induced Epitaxial Crystallization

在本次研究过程中，我们取得了以下成果。电子束轰击对在Si2衬底上生长CeO2晶体非常有效。沟道条件下高能重离子轰击提高了CeO2的结晶质量。原位反射高能电子衍射仪显示，利用新研制的具有水冷靶架的样品操纵器，可以在超高真空中蒸发硅，形成无微晶的非晶态硅薄膜。本文报道了在350℃和4000℃靶温度下，用高能Si和Ge离子束轰击沉积的非晶Si/CeO_2薄膜的离子束诱导外延晶化。在Si/CeO2界面上没有观察到IBIEC，这可能是由于Si5的存在使CeO2被还原而在界面形成了SiO_2。对于SiGe/Si的另一种异质界面，SiGe的IBIEC是通过高能Ge离子轰击进行的。在Si衬底上真空沉积Ge层，用低能Ge离子轰击Ge/Si界面，通过反冲注入逐渐改变Ge含量。用高能Ge离子轰击晶化了含Si和Ge的非晶层。

During the course of the current research program, we have obtained the following results.1. Electron beam bombardment is very effective for the crystal growth of CeO_2 on Si.2. The crystalline quality of CeO_2 is improved by high energy heavy ion bombardment under the channeling condition .3. In-situ reflection high energy electron diffraction has revealed that using the newly developed sample manipulator with the water-cooled target holder, an amorphous Si thin film without micro crystalline can be formed by the Si evaporation in ultra high vacuum.4. We have tricd the Ion Beam Induced Epitaxial Crystallization for deposited amorphous Si/CeO_2 by High energy Si and Ge ion beam bombardment at the target temperature of 350℃ and 4000 ℃. No IBIEC was observed at the Si/CeO_2 interface, probably due to the SiO_2 formation at the interface as a result of reduction of CeO_2 by the presence of si.5. For another hetero interface of SiGe/Si, IBIEC of SiGe proceeded by the high energy Ge ion bombardment. Germanium layers were vacuum deposited on Si substrates and low energy Ge ions were bombarded towards the Ge/Si interface in order to gradually change the Ge content Si by recoil implantation. Amorphous layers containing Si and Ge were crystallized by the high energy Ge ion bombardment.