In-Situ Growth-Studies of Metal Halide Perovskites for Tandem Solar Cells.
In-Situ Growth-Studies of Metal Halide Perovskites for Tandem Solar Cells.
批准号:
455786566
负责人:
Dr. Tim Kodalle
金额:
$0.0万
依托单位国家:
德国
项目类别:
WBP Fellowship
财政年份:
2020
资助国家:
德国
项目状态:
已结题
起止时间:
2019-12-31 至 2022-12-31
中文摘要
结合使用原位光致发光和UV-Vis测量以及x射线衍射和成像技术,我想研究金属卤化物钙钛矿的生长取决于所使用的衬底。该项目的目标是了解不同的衬底,特别是功能齐全的底部太阳能电池,如何影响随后沉积的钙钛矿层的成核、相发育和结晶路径(“生长”)。此外,还将分析衬底性能与钙钛矿的组成、择优取向、结构和形貌之间的相互作用。这种理解将使我能够使用各种底部电池技术为串联太阳能电池中的钙钛矿层提出单独优化的沉积工艺。特别是,我将比较单结太阳能电池(玻璃/氧化铟锡(ITO)/空穴传输层(HTL)堆叠)标准衬底上的钙钛矿层的性能,以及基于Cu(In,Ga)Se2 (CIGS)吸收层和后结si异质结器件的底电池的性能。在提出的工作计划的不同阶段,我将使用通过三种不同的沉积技术(分子束外延,热共蒸发,顺序溅射/退火)以及在不同的衬底(刚性玻璃和柔性聚酰亚胺箔)制备的CIGS吸收层。此外,我将改变所使用的html:溅射NiOx、原子层沉积NiOx和自组装单层(sam)。虽然不同的沉积技术会导致CIGS吸收层粗糙度的强烈变化,从而间接影响钙钛矿生长的衬底形貌,但不同HTLs的使用直接影响钙钛矿层的成核。因此,在这个项目中要测试的主要假设是,底部电池的表面粗糙度以及HTL的表面性质将改变钙钛矿的初始成核以及随后的生长和整体性质。结合我在光伏应用的多晶吸收材料的制造和表征方面的经验,以及在选定的宿主组织中可用的钙钛矿薄膜的原位多模态分析的专业知识和设备,我的目标是用高时间分辨率分析钙钛矿层的生长,能够对所涉及的过程有一个基本的理解,并为顶部电池的制造提供详细的建议。最后,我还将利用主办机构的实验装置来研究高效CIGS/钙钛矿和Si/钙钛矿串联太阳能电池的降解机制。这样,我将能够揭示底层电池的特性与钙钛矿的特性及其稳定性之间的相互作用。
英文摘要
Using a combination of in-situ photoluminescence and UV-Vis measurements together with X-ray diffraction and imaging techniques, I want to investigate the growth of metal halide perovskites depending on the substrate in use. The goal of the project is to understand how different substrates, in particular fully functional bottom solar cells, affect the nucleation, phase development, and crystallization path (the “growth”) of subsequently deposited perovskite layers. Furthermore, the interplay of the properties of the substrate and the composition, preferential orientation, structure, and morphology of the perovskite will be analyzed. This understanding will enable me to propose individually optimized deposition processes for the perovskite layers in tandem solar cells using various bottom cell technologies. In particular, I will compare the properties of the perovskite layer on standard substrates for single-junction solar cells (glass/indium tin oxide (ITO)/hole transport layer (HTL)-stacks) with its properties on bottom cells based on Cu(In,Ga)Se2 (CIGS) absorber layers and rear-junction SI-heterojunction devices respectively. In the different stages of the proposed work program, I will use CIGS absorber layers prepared by three different deposition techniques (molecular beam epitaxy, thermal co-evaporation, sequential sputtering/annealing) as well as on different substrates (rigid glass and flexible polyimide foil). Furthermore, I will vary the HTL used: sputtered NiOx, atomic layer deposited NiOx, and self-assembling monolayers (SAMs). While the different deposition techniques lead to strong variations in the roughness of the CIGS absorber layer, and therefore indirectly affect the morphology of the substrate of the perovskite growth, the use of different HTLs is directly affecting the nucleation of the perovskite layer. Consequently, the main hypothesis to be tested during this project is that the surface roughness of the bottom cell as well as the surface properties of the HTL will alter the initial nucleation as well as the following growth and the overall properties of the perovskite. Combining my experience in the fabrication and characterization of polycrystalline absorber materials for photovoltaic applications with the expertise and equipment for in-situ, multi-modal analysis of perovskite thin-films available at the chosen host organization, I aim to analyze the growth of the perovskite layer with a high time-resolution being able to develop a fundamental understanding of the involved processes and to give detailed suggestions for the top cell fabrication. Finally, I will also utilize the experimental setup at the host organization to investigate the degradation mechanisms of highly efficient CIGS/perovskite and Si/perovskite tandem solar cells. Doing so, I will be able to unravel the interplay of the properties of the bottom cells on the properties of the perovskite and its stability.
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国内基金
海外基金
基于FP-Growth关联分析算法的重症患者抗菌药物精准决策模型的构建和实证研究
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批准号:2024Y9049
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项目类别:省市级项目
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资助金额:100.0万元
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批准年份:2024
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负责人:阮君山
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依托单位:
Research on the Rapid Growth Mechanism of KDP Crystal
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批准号:10774081
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项目类别:面上项目
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资助金额:45.0万元
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批准年份:2007
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负责人:滕冰
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依托单位: