Hot electron transistor using magnetic thin film as metal base

研究了具有3个末端结构的Si/Au/NiFe/Cu/Co/FeMn/Au/AlO和n-Si/Au/NiFe/Cu/Co/FeMn/Au薄膜的电流与磁场的关系。这3个端子分别称为发射极、基极和集电极。采用射频/直流磁控溅射法制备样品。用HF去除硅片上的天然氧化层。在测量电流时，两个电源用于输入和输出偏置。对于输入偏置，采用恒流源或恒压源。在室温下，测量了不同输出偏置电压下基极和集电极电流对磁场的依赖关系。电流变化的比率取决于施加在背面电极上的偏置电压。在室温下，在偏置电压下，集电极电流几乎为零，电流变化约为400%。当恒流源作为输入偏置时，集电极电流以磁层反平行磁化方向增大。但是，集电极电流减小，当源电压恒定时。考虑到测量几何形状和集电极电流的变化，认为集电极电流对磁场的依赖是集电极电流对磁场变化的影响，认为集电极电流对磁场变化的影响是CIP几何形状中阻抗变化的影响。

A dependence of a current on magnetic field has been investigated for Si/Au/NiFe/Cu/Co/FeMn/Au/AlO and n-Si/Au/NiFe/Cu/Co/FeMn/Au films with 3 terminal structures. The 3 terminals are called a emitter, base and collector, respectively. The samples were prepared by RF/DC magnetron sputtering. A native oxide layer on Si wafer was removed by HF. In measurements of a current, two power sources were used for input and output biases. For the input bias, a constant current source or constant voltage source were used. The dependence of the base and the collector current on magnetic fields was measured for various output bias voltages at room temperature.A ratio of a current change depended on a bias voltage applied to a backside electrode. An about 400% of current change was obtained at room temperature at a bias voltage where the collector current was nearly zero. When the constant current source was used as the input bias, the collector current was increased at an antipararell alignment of magnetization in magnetic layers. However, the collector current was decreased, when the constant voltage source. Taking into account the measurement geometry and the variation of the collector current, the dependence of the collector current on the magnetic field was thought to be effect of the variation of the collector current on the magnetic field was thought to be effect of the variation of the impedance in the CIP geometry.