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Spin dependent electron transport in hot electron transistor using magnetic metal

Spin dependent electron transport in hot electron transistor using magnetic metal
使用磁性金属的热电子晶体管中的自旋相关电子传输
批准号:
18560317
负责人:
JIMBO Mutsuko
金额:
$2.49万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2006
资助国家:
日本
项目状态:
已结题
起止时间:
2006 至 2007

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中文摘要
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英文摘要
a SVT with schottky barrier, a MTT with double tunnel junctions and a magnetoresistance effect of granular films have been investigated. At first, a TMR chamber was made because other target was not contaminated when oxygen was introduced.For the SVT, a reproducibility of Si/Au schottky bather was examined because of an important part. As a result, anemitter voltage dependence of a magneto-current (MC) and a transfer ratio became obtained quantitatively. The effects of the base materials and its structure have been investigated in a hot electron transport.The MTT with double junctions were prepared in order to investigate the emitter voltage dependence of a magneto-current (MC). It was observed that hot electrons contributed to a collector current. A trans far ratio of over 10^3 was obtained in an MTT with double tunnel junction& The MC decreased gradually with increasing emitter voltage. The emitter voltage at which the MC decreased to half its original value was over 1.5V.The granular films are consisted of ferromagnetic metal nano-granules embedded in insulating matrix, Aim of the three terminal structure using granular films, Fe-MgO granular films were also prepared and investigated their magnetoresistance effects and resistivities depending on the film structure. Depending on the Fe composition, the granular films exhibited resistivities ranged from 5.0 to 40m Ωcm. The MR ratio increased with increasing the resistivity of the films. The low field MR loops for the films with various MgO buffer layer thickness are shown in figure 1. The shape of MR loop was different depending on the MgO buffer layer thickness. The sharp peaks near the coercive field become small. It is thought that the average size of Fe granules has changed according to the MgO buffer layer thickness. The MR ratio slightly increased with increasing the MgO buffer layer thickness and the resistivity also increased. The maximum MR ratio of 2.3% was obtained with the high field measurement system.
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Tunnel Magnetoresistance Effect of Fe-Mg0 Granular Films
Fe-Mg0 颗粒薄膜的隧道磁阻效应
DOI: --
发表时间: 2006
期刊:
影响因子: --
作者: [J. Totsuka, K. Matsumoto, Y. Fujiwara, M. Jimbo]
通讯作者: M. Jimbo
MgOグラニュラー膜の構造と磁気抵抗効果
MgO颗粒薄膜的结构与磁阻效应
DOI: --
发表时间: 2007
期刊:
影响因子: --
作者: [H. Nakanishi, H. Omae, Y, Fujiwara, M. Jimbo, T. Kobayashi, S. Shiomi, 戸塚 巡, Jun Totsuka, 戸塚 巡]
通讯作者: 戸塚 巡
TMR effect of Fe-MgO granular films with MgO buffer layer
带有MgO缓冲层的Fe-MgO颗粒薄膜的TMR效应
DOI: --
发表时间: 2007
期刊:
影响因子: --
作者: [R. Kusakabe, J. Tozuka, Y. Fujiwara, M. Jimbo, T. Kobayashi, S. Shiomi, J.Totsuka]
通讯作者: J.Totsuka
Composition dependense of Magnetoresistance effect of Fe-MgO granular films
Fe-MgO颗粒薄膜磁阻效应的成分依赖性
DOI: --
发表时间: 2007
期刊:
影响因子: --
作者: [J. Totsuka, K. Matsumoto, Y. Fujiwara, M. Jimbo]
通讯作者: M. Jimbo
14
    Attempt of application of half-metal granular to spin transistor structure
    • 批准号:
      22560308
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $2.75万
    • 财政年份:
      2010
    • 负责人:
      JIMBO Mutsuko
    • 依托单位:
    Hot electron transistor using magnetic thin film as metal base
    • 批准号:
      11450130
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $7.49万
    • 财政年份:
      1999
    • 负责人:
      JIMBO Mutsuko
    • 依托单位:
    海外基金