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Development of a non-destructive measurement system of nanoscale properties of materials using carbon nanotubes

Development of a non-destructive measurement system of nanoscale properties of materials using carbon nanotubes
利用碳纳米管开发材料纳米级特性的无损测量系统
批准号:
15310095
负责人:
YOSHIMURA Masamichi
金额:
$8.83万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2003
资助国家:
日本
项目状态:
已结题
起止时间:
2003 至 2004

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项目成果

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中文摘要
翻译
本研究旨在开发一种以碳纳米管为探针的材料纳米尺度性能无损测量系统。碳纳米管探针是必要的,以减少探针之间的距离的大小,因为它们的新的结构特性方面的小直径和高纵横比。在这项研究中,碳纳米管探针已成功地制造使用微波增强等离子体CVD技术,其中使用避雷针的最佳生长条件被施加到传统的钨探针的顶点上选择性地生长碳纳米结构。通过对石墨表面晶格像的观察,证实了所制备的碳纳米管探针的性能。在无损检测方面,我们提出了一种新的接近系统。利用该系统,采用四探针法测量了Si(111)晶片的电阻率,探针间距从18 μm变化到500 μm。考虑到非半无限介质的校正因子,测得的电压与探针间距曲线具有高度可重复性,并且定性上与预期行为非常一致。最后,我们开发了一个新的测量系统的基础上,零的方法,以消除接触电阻,其中偏置-双绞线是新设计的,并在这项研究中进行了评估。
英文摘要
This study aims to develop a non-destructive measurement system of nanoscale properties of materials using carbon nanotubes (CNT) as probes. CNT probes are necessary to reduce the size of the distance between probes, because of their novel structural properties in terms of small diameter and high-aspect ratio. In this study, carbon nanotube probes have been successfully fabricated using microwave enhanced plasma CVD technique, where optimum growth condition using lightning conductor is applied to grow carbon nanostructures selectively onto the apex of conventional tungsten probes. The performance of the :prepared CNT probe has been confirmed by the observation of lattice image of graphite surface. As for the non-destructive measurement, we have proposed a new approaching system. Using this system, the resistivity of a Si(111) wafer is measured by the four-point probe method with the probe spacing changed from 18 μm to 500 μm. The measured voltage vs. probe spacing curve is highly reproducible and is qualitatively in good agreement with the expected behavior, taking into account the correction factor for a non-semi-infinite medium. Lastly, we have developed a new measurement system based on null method to eliminate contact resistance, where biased-preamplifier is newly designed and evaluated in this study.
期刊论文(64)
专著(0)
科研奖励(0)
会议论文
Hydrogen interaction with Si(1 1 1) 3 x 3 -B surfaces
氢与 Si(1 1 1) 3 x 3 -B 表面的相互作用
DOI: 10.1016/j.apsusc.2004.06.052
发表时间: 2004
期刊: Physiotherapy
影响因子: 3.3
作者: [M. Yoshimura, Kazutaka Watanabe, K. Ueda]
通讯作者: K. Ueda
DOI: 10.1016/j.tsf.2004.06.071
发表时间: 2004-10
期刊: Thin Solid Films
影响因子: 2.1
作者: [K. Ueda;M. Yoshimura]
通讯作者: K. Ueda;M. Yoshimura
M.Yoshimura: "Step-debunching in Sn/Si(001) surfaces"Thin Solid Films. (In press). (2004)
M.Yoshimura:“Sn/Si(001) 表面的逐步脱聚”固体薄膜。
DOI: --
发表时间:
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影响因子: --
作者: []
通讯作者:
K.Ueda: "Fabrication of nanofigures by focused electron beam-induced deposition"Thin Solid Films. (In press). (2004)
K.Ueda:“通过聚焦电子束诱导沉积制造纳米图形”固体薄膜。
DOI: --
发表时间:
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共 18 条
    Manipulation of fullerene molecules in graphene films
    • 批准号:
      24656039
    • 项目类别:
      Grant-in-Aid for Challenging Exploratory Research
    • 资助金额:
      $2.58万
    • 财政年份:
      2012
    • 负责人:
      YOSHIMURA Masamichi
    • 依托单位:
    Improvement of Sliding Properties of Artificial Hip Joint Metals by Coating of Carbon Nanomaterials
    • 批准号:
      23651098
    • 项目类别:
      Grant-in-Aid for Challenging Exploratory Research
    • 资助金额:
      $2.5万
    • 财政年份:
      2011
    • 负责人:
      YOSHIMURA Masamichi
    • 依托单位:
    Digital Control of Terrace Width of One-dimensional Semiconductor Surfaces by Modification of Lattice Strain
    • 批准号:
      12450024
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $5.38万
    • 财政年份:
      2000
    • 负责人:
      YOSHIMURA Masamichi
    • 依托单位:
    Atomic-scale Etching and Deposition using adsorbed Halogen gases on Semiconductor surfaces.
    海外基金