DEVELOPMENT OF MICRO ULTRAVIOLET RADIATION SENSOR

采用Ga_XAl_<1-X>N晶体薄膜设计了微紫外辐射传感器。制作了传感器并对其性能进行了评价。评价特点及结果如下：采用MOCVD法在蓝宝石衬底上生长了Ga_XAl_<1-X>N晶体薄膜。测定了薄膜的组成、结晶度和光谱特性。结果决定了薄膜的生长条件。测定了Ga_XAl_<1-X>N薄膜的光谱透射率和光谱响应率。根据实验结果，确定了用于传感器的Ga_XxAl_<1-X>N薄膜的组成和膜厚。设计并制作了多层薄膜结构的微紫外辐射传感器。利用标准探测器对传感器的光谱响应度进行校正。实验证实该传感器可作为UV-A、UV-B和UV-C传感器工作。

The micro ultraviolet radiation sensor using Ga_XAl_<1-X>N crystal thin films was designed. The sensor was fabricated and the performance was evaluated. Evaluating characteristics and the results are as follows. Ga_XAl_<1-X>N crystal thin films were grown by MOCVD on sapphire substrates. The composition, the crystallinity and the spectral characteristic of the films were measured. The growth condition of the film was decided by the results. The properties of spectral transmittance and of spectral responsivity were measured on the Ga_XAl_<1-X>N films. From the results, the compositions and the film thickness of the Ga_XxAl_<1-X>N films used in the sensor were decided. Micro ultraviolet radiation sensor with the multi-layer film structure was designed and was fabricated. The spectral responsivity of the sensor was caribrated by the standard detector on the spectral responsivity. It was confirmed that the sensor operated as UV-A, UV-B and UV-C sensor.