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Novel electric field induced coupling technique for liquid-phase heteroepitaxial growth of carbon thin films with diamond-like structure

Novel electric field induced coupling technique for liquid-phase heteroepitaxial growth of carbon thin films with diamond-like structure
类金刚石结构碳薄膜液相异质外延生长的新型电场诱导耦合技术
批准号:
LP0561605
负责人:
Prof Shi Xue Dou
金额:
$0.97万
依托单位:
依托单位国家:
澳大利亚
项目类别:
Linkage Projects
财政年份:
2005
资助国家:
澳大利亚
项目状态:
已结题
起止时间:
2005-12-31 至 2007-12-31

项目摘要

项目成果

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中文摘要
翻译
该项目的目标是通过开发一种新的生长技术:电场诱导耦合(EFIC),基于液相逐层异质外延生长,生长出用于高性能电子应用的具有坚固的类金刚石结构的碳薄膜。与现有技术相比,采用独特的极化诱导生长的EFIC技术将显著提高技术产出,因为它克服了目前昂贵而复杂的生产方法的困难。该技术采用的环境温度和压力将使我们能够以足够的速度和工业生产所需的性能以低成本形成金刚石半导体。
英文摘要
The aim of the project is the growth of carbon thin films with a robust diamond-like structure for high performance electronic applications via the development of a new growth technique: Electric Field Induced Coupling (EFIC), which is based on liquid-phase layer-by-layer heteroepitaxial growth. The EFIC technique employing unique polarization-induced growth will significantly enhance technological output compared to existing technologies by overcoming current difficulties with expensive and complicated production methods. Ambient temperatures and pressures employed by the technique will enable us to form diamond-based semiconductors at low cost with sufficient speed and the properties required for industrial production.
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