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Towards Photonic and Electronic Devices for High Indium Content Nitride Semiconductors

Towards Photonic and Electronic Devices for High Indium Content Nitride Semiconductors
面向高铟含量氮化物半导体的光子和电子器件
批准号:
DP0556391
负责人:
Dr Kenneth Butcher
金额:
$25.53万
依托单位:
依托单位国家:
澳大利亚
项目类别:
Discovery Projects
财政年份:
2005
资助国家:
澳大利亚
项目状态:
已结题
起止时间:
2005-01-01 至 2008-12-31

项目摘要

项目成果

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中文摘要
翻译
氮化物半导体广泛用于移动的电话和照明应用中。麦考瑞大学的低温氮化物半导体小组专门研究使用生长技术来提高这些材料的质量,这将使氮化镓在室内照明中变得商业可行。通过与欧洲的研究人员合作,我们打算开发和利用下一代氮化物材料,用于高速移动的通信和光子应用。为这个项目组建的团队在这些材料的开发方面有着出色的资历,重要的是,他们有着出色的探测和理解材料现象的能力。
英文摘要
Nitride semiconductors are widely used in mobile phone and lighting applications. The Low Temperature Nitride Semiconductor Group at Macquarie University have specialized in improving the quality of these materials using growth techniques that will allow gallium nitride to become commercially viable for room lighting. In collaboration with researchers in Europe we intend to develop and exploit the next generation of nitride materials for high-speed mobile communications and photonic applications. The team assembled for this project have excellent credentials in the development of these materials and, importantly, an excellent ability to probe and understand material phenomena.
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The Macquarie National Low Temperature Optoelectronic Thin Film Growth Facility
  • 批准号:
    LE0560959
  • 项目类别:
    Linkage Infrastructure, Equipment and Facilities
  • 资助金额:
    $11.0万
  • 财政年份:
    2005
  • 负责人:
    Dr Kenneth Butcher
  • 依托单位:
海外基金