Foundation of MgB2 superconducting junction technology

据预测，21世纪全球氦资源将枯竭。到21世纪末，目前所有依赖于Nb(T_c~9K)的超导电子学应用将被终结。这项研究是为了发展利用新近发现的T_c=40K的MgB_2作为“后Nb”超导电子学的超导电子学基础。在这个项目中，用低温分子束外延和高温化学气相沉积两种方法发展了高质量的MgB_2薄膜的生长技术。我们还尝试了用各种势垒材料来制备所有的MgB_2约瑟夫森结。

It has been predicted that the global helium resources will beexhausted in the 21st century. In the end of the 21st century, all of currentsuperconducting electronics applications relying on niobium (Tc ~ 9 K) will be ended. Thisresearch project has been performed to develop the Josephson junction fabricationtechnology using recently discovered MgB2 with Tc = 40 K, aiming at establishing thefoundation of superconducting electronics with MgB2 operating above 20 K (hydrogenboiling temperature) as “post-niobium" superconducting electronics. In this project, thegrowth techniques of high-quality MgB2 films have been developed either bylow-temperature molecular beam epitaxy or by high-temperature chemical vapordeposition. The fabrication of all MgB2 Josephson junctions has also been attemptedusing various barrier materials.