New AlPN/GaN semiconductor heterojunctions for better GaN based electronics

该提案旨在开发新的III族氮化物半导体合金Al 1-xGaxPyN 1-y的生长，其可以用作具有高自发极化的阻挡层材料。与常规AlGaN/GaN HEMT相比，Al 1-xGaxPyN 1-y势垒将在AlGaPN/GaN HEMT的GaN沟道的界面处感应更多的电荷。因此，它的使用保证了HEMT中更高的功率密度，无论它们是为RF还是为功率电子设计的。此外，它可以生长与GaN晶格匹配的材料，例如AlP10.5N89.5，这将提高器件的可靠性，并为新的器件概念铺平道路。AlPyN 1-y于2020年在名古屋大学（NU）首次合成。这是通过在MOVPE中使用前体叔丁基膦（tBP）实现的。生长还不成熟，许多物理性质仍不确定。在国际联合计划中拟议合作的优势在于有机会研究Al 1-xGaxPyN 1-y的生长和特性，与日本的tBP和德国的无碳膦（PH 3）互补，共同的目的是证明其与AlxGa 1-xN相比的优越性，作为最先进的HEMT中的阻挡层，并在垂直功率器件中实现新的器件概念。

The proposal aims to develop the growth of the new group III-Nitride semiconductor alloy Al1-xGaxPyN1-y which can serve as a barrier layer material with high spontaneous polarization. An Al1-xGaxPyN1-y barrier would induce more charges at the interface to the GaN channel of an AlGaPN/GaN HEMT as compared to conventional AlGaN/GaN HEMTs. Its use therefore promises higher power densities in HEMTs whether they are designed for RF or for power electronics. Further, it can be grown lattice matched to GaN, e.g. as AlP10.5N89.5, which should improve device reliability and pave the path for new device concepts. AlPyN1-y was first synthesized at Nagoya University (NU) in 2020.This was achieved by the use of the precursor tertiary-butylphosphine (tBP) in MOVPE. The growth is still immature and many physical properties are still uncertain. The strength of the proposed cooperation within the international joint program consists in the opportunity to investigate the growth and properties of Al1-xGaxPyN1-y complementary with tBP in Japan and carbon-free phosphine (PH3) in Germany with the joined aim to demonstrate its superiority compared to AlxGa1-xN as a barrier layer in state of the art HEMTs and to enable new device concepts in vertical Power devices.