An ultramultiple-device microwave oscillator

1.采用紧凑型匹配元件和与同轴线相适应的阻抗阶跃，研制了宽带六端口魔结（MJ）（带宽约为1GHz）.描述了通过上述MJ和三个小尺寸魔T（MT）耦合的六个振荡器的功率合成系统。当MJ的圆形臂和每个MT的H平面臂终止于具有幅度为3.3 - 0.6和相位为的反射系数的电路中时，六个振荡器的输出完全联合收割机在MJ的同轴臂处的负载中组合。本文提出了一种可装载四个二极管的古恩@-二极管安装结构。文中还给出了由N个支架串联而成的4 N器件振荡器的设计方程。此外，功率合成效率的95.1%，94.3%，88.3%的实验获得与8，16，24个器件的振荡器，分别。一个功率合成效率为85.5%（99.6%，只有MT）的形式获得的48个设备的振荡器系统构成的两个24个设备的振荡器通过MT耦合。最后，一个144-device（ultramultimultiple-device）振荡器系统是由6个24-device振荡器MT和MJ组装而成的，输出功率为3.8 W，功率合成效率为78.9%（DC-RF转换效率为1.96%）。正如预期的那样，这种组合输出功率是单个器件平均输出功率（33.5mW）的100倍以上（确切地说是113倍）。

1. A broadban six-port magic junction (MJ) is developed by means of a compact matching element and an impedance-step adapted to the coaxial line (the bandwidth is about 1 GHz).2. A power combining system of six oscillators coupled through the above MJ and three small-sized magic T's (MT) is described. When the circular arm of MJ and the H-plane arm of each MT are terminated in a circuit having a reflection coefficient with the amplitude of 3.3 - 0.6 and the phase of , the outputs of the six oscilators completely combine in a load at the coaxial arm of MJ.3. A GUNN@-diode mounting structure possible of loading four diodes is newly proposed. Design equations of a 4N-device oscillator consisting of a series connection of N mounts are given also. Moreover, power-combining efficiencies of 95.1 percent, 94.3 percent, and 88.3 percent are experimentally obtained with 8-, 16-, and 24-device oscillators, respectively.4. A power-combining efficiency of 85.5 percent (99.6 percent for only MT) is obtained form a 48-device oscillator system constructed of two 24-device oscillators coupled through MT.5. Finally, a 144-device (ultramultiple-device) oscillator system is assembled from six 24-device oscillators, MT, and MJ, and an output power of 3.8 W is achieved with a power-combining efficiency of 78.9 percent (a dc-RF conversion efficiency of 1.96 percent). As was expected, this combined output power is more than one hundred times (exacly 113 times) as large as the average output of the single device (33.5mW).