Development of Silicon Microstrip Detectors

1)在高能高亮度对撞机实验中，我们正在研制一套用于大型跟踪探测器的硅微带探测器系统。2)研制了辐射硬探测器所必需的数字读出系统，并通过束流试验验证了其性能。采用50um间距交流耦合传感器和最新研制的前置放大器-整形器-鉴别器芯片，实现了99%以上的检测效率和14um的位置分辨率。3)研究了传感器电容与条带几何形状的关系，建立了优化设计准则。4)研究了全耗尽电压与条带几何形状的关系。5)我们发现条带边缘的微击穿限制了最大可操作偏置电压。微击穿的起始电压对注入带和交流耦合铝外电极的几何形状非常敏感。6)辐照效应使传感器的完全耗尽电压在几次10^~(-13)质子/厘米~2辐照后显著增加，这要求在高偏压操作下具有较强的稳健性。7)辐照使微击穿起始电压显著恶化。

1)We have being developed a silicon microstrip-detector system for a large tracking detector at high energy and high luminosity collider experiments. The key issue that must be studied and solved is radiation damage effects and their treatments.2)The digital readout system which is thought to be essential for the radiation hard detector has been developed and its performances have been demonstrated by beam test. With a combination of 50mum pitch AC coupled sensor and a newly developed preamplifier-shaper-discriminator chip, a detection efficiency of more than 99% and a position resolution of 14mum has been achieved.3)A relation between sensor capacitance and strip geometry has been investigated and optimal design rule has been established.4)We have studied a relation between full-depletion voltage and strip geometry. 5)We have found that a micro-breakdown at the strip edge limits the maximum operable bias voltage. An onset voltage of the micro-breakdown has been found to be sensitive to the geometry of implant strip and AC coupled Al external electrode.6)The radiation effects on bulk increases a full-depletion voltage of the sensor significantly beyond irradiation of a few times 10^<13> protons/cm^2, which demands robustness at high bias-voltage operation.7)The onset-voltage of the micro-breakdown have been worsen significantly by irradiation.