Radiation Damage Effects on the Semiconductor Particle Detector and Electronics by Neutrons produced in the Calorimeter

热量计中产生的中子对半导体粒子探测器和电子器件的辐射损伤效应

• 批准号: 63460016
• 负责人: OHSUGI Takashi
• 金额: $ 4.93万
• 依托单位: HIROSHIMA UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (B)
• 财政年份: 1988
• 资助国家: 日本
• 起止时间: 1988 至 1989
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-63460016/
• 关键词: Neutron Damage; Radiation Damage; Silicon Radiation Detector; Radiation Damage of Semiconductor; Semiconductor Particle Detector; Radiation Damage of semiconductor; 半導体検出器の放射線損傷

In this year, we have measured a neutron energy dependence of the damage of the silicon solid state detector and an annealing effects of the damage at room temperature. We also studied a neutron intensity dependence of the damage.The energy dependence of the meutron damage was studied by comparing the results of evaporation neutrons experiment with that of reactor neutrons. The energy spectrum of evaporation neutron from the 12 Gev proton bombardments on the thick copper target is expected to be 2-3 times higher than that of fast neutron in the reactor on average. The damage constant measured with the increase rate of leakage current by the evaporation neutron irradiation has been measured to be 3-4 times higher than that from the measurement by the reactor neutrons.The annealing of the neutron damage at room temperature was monitored from just after the irradiation to 300 days. The leakage current decreased exponentially to 80 days and stopped at about 60 % of the initial value. The decay constant is measured to be 160 days.The intensity dependence of the damage constant was also studied. There is no significant deference in the damage constant measured by the increase rate of the leakage current from 10^9 to 10^<13> neutrons cm^<-2> s^<-1>.We have also performed preliminary study of the damage by gamma rays. An interesting results have been obtained about the leakage current behavior.

在这一年中，我们测量了硅固体探测器损伤的中子能量依赖性和室温下损伤的退火效应。通过比较蒸发中子和反应堆中子的实验结果，研究了中子损伤的能量依赖性。12 GeV质子轰击厚铜靶产生的蒸发中子能谱比反应堆中快中子能谱平均高2-3倍。用蒸发中子辐照法测得的随漏电流增加率变化的损伤常数比用反应堆中子法测得的高3-4倍，并对辐照后至300天的中子损伤退火过程进行了监测。漏电流指数下降到80天，并停止在约60%的初始值。测得其衰减常数为160天，并研究了损伤常数与强度的关系。用漏电流增加率从10 ^9到10^9中子cm^ s^测量的损伤常数没有明显的差别<13><-2><-1>。我们还对γ射线的损伤作了初步的研究。关于漏电流行为，得到了一个有趣的结果。

项目成果

M.Hasegawa, S.Mori, T.Ohsugi, H.Kojima, A.Taketani, T.Kondo, M.Noguchi: "Radiation Damage of Silicon Junction Detectors by Neutron Irradiation" Nuclear Instruments and Methods, A277, 395-400, 1989.

M.Hasekawa、S.Mori、T.Ohsugi、H.Kojima、A.Taketani、T.Kondo、M.Noguchi：“中子辐照对硅结探测器的辐射损伤”核仪器和方法，A277, 395-400，

Tatsumi Arima, Yuzo Asano, Masami Hasegawa, Shigeki Mori, Takahiko Kondo, Masaharu Noguchi, Takashi Ohsugi, Atsushi Taketani: "Radiation Damage of Silicon Junction Photodiodes by Evaporation Neutrons from Nuclear Spallation Reactions," Japanese Journal of

Tatsumi Arima、Yuzo Asano、Masami Hasekawa、Shigeki Mori、Takahiko Kondo、Masaharu Noguchi、Takashi Ohsugi、Atsushi Taketani：“核散裂反应中蒸发中子对硅结光电二极管的辐射损伤”，日本杂志

T.Ohsugi, H.Kojima, T.Kondo, M.Noguchi, M.Hasegawa, S.Mori and F.Shiraishi: "Room temperature Annealing and Rate Effect of Neutron Damage on Silicon Detector" Proceedings of the SSC Calorimeter Workshop at Tuscaloosa, Alabama, March 13-17, 1989.

T.Ohsugi、H.Kojima、T.Kondo、M.Noguchi、M.Hasekawa、S.Mori 和 F.Shiraishi：“室温退火和中子损伤对硅探测器的速率影响”塔斯卡卢萨 SSC 量热仪研讨会论文集

M.Hasegawa: "Radiation Damage of Silicon Junction Detectors by Neutron Irradiation" Nuclear Instruments and Methods. A277. 395-400 (1989)

M.Hasekawa：“中子辐照对硅结探测器的辐射损伤”核仪器和方法。

M.Hasegawa.: Nuclear Instruments and Methods in Physics Resarch A. (1989)

M.Hasekawa.：物理研究中的核仪器和方法 A. (1989)