Radiation Damage Effects on the Semiconductor Particle Detector and Electronics by Neutrons produced in the Calorimeter

在这一年里，我们测量了硅固体探测器损伤的中子能量依赖性和室温下损伤的退火效应。我们还研究了中子强度对损伤的依赖关系。通过对蒸发中子实验结果与反应堆中子实验结果的比较，研究了中子损伤的能量依赖性。预计12gev质子轰击厚铜靶的蒸发中子能谱平均比反应堆内快中子能谱高2-3倍。蒸发中子辐照随泄漏电流增加速率测量的损伤常数比反应堆中子辐照测量的损伤常数高3 ~ 4倍。对辐照后至300天的中子损伤在室温下的退火过程进行了监测。泄漏电流呈指数下降至80天，并在初始值的60%左右停止。衰变常数测量为160天。研究了损伤常数的强度依赖性。泄漏电流增加速率测量的损伤常数从10^9到10^<13>中子cm^<-2> s^<-1>无显著差异。我们还对伽马射线造成的损害进行了初步研究。关于泄漏电流的特性，得到了一个有趣的结果。

In this year, we have measured a neutron energy dependence of the damage of the silicon solid state detector and an annealing effects of the damage at room temperature. We also studied a neutron intensity dependence of the damage.The energy dependence of the meutron damage was studied by comparing the results of evaporation neutrons experiment with that of reactor neutrons. The energy spectrum of evaporation neutron from the 12 Gev proton bombardments on the thick copper target is expected to be 2-3 times higher than that of fast neutron in the reactor on average. The damage constant measured with the increase rate of leakage current by the evaporation neutron irradiation has been measured to be 3-4 times higher than that from the measurement by the reactor neutrons.The annealing of the neutron damage at room temperature was monitored from just after the irradiation to 300 days. The leakage current decreased exponentially to 80 days and stopped at about 60 % of the initial value. The decay constant is measured to be 160 days.The intensity dependence of the damage constant was also studied. There is no significant deference in the damage constant measured by the increase rate of the leakage current from 10^9 to 10^<13> neutrons cm^<-2> s^<-1>.We have also performed preliminary study of the damage by gamma rays. An interesting results have been obtained about the leakage current behavior.