Study of Radiation Damage on Electronic Parts for High Energy Physics

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Radiation damage on electronic parts will be one of the most serious problems for a high energy experiment of the next generation machine such as the Superconducting Super Collider and the Large Hadron Collider. We, therefore, must study systematically the radiation damage of semiconductor devices which are the most important parts of detector electronics or even particle detector itself may be made by semiconductor. At start of the systematic study, we picked up a silicon strip detector (SSD) based on a pn junction-diode produced by planer-process which is the basic stracture of every kind of microelectronics.Six different type of the SSD was tested. They have all different junction and insulation structure; different size of pn junction and insulation between junctions, different thickness of Si <O_2> insulator, and different type of semiconductor-base.Extracted-proton-beam of 12GeV PS bombarded on these samples at KEK Instantaneous intensity of the beam was about <10^(11)> protons/s for 7mm (FWHM) diameter. Total dose irradiated at the center of the beam was measured to be 2 X <10^(14)> protons/ <cm^2> . An amount of the radiation damage has been evaluated by measurement of a dark-current which is generated at radiation defects. Also signals of <^(241)Am> <gamma> ray and penetrating <beta> ray has been observed for the irradiated SSD and comapred with signals from new one.No sizable difference in the increase of dark current has been observed between six samples having different junction-insulator structure. Pulse-height degradation for <gamma> ray and <beta> ray signals hasbeen observed. It amounts to 10% degradation for total dose of 5x <10^4> Gy. Degradation of energy resolution for <gamma> ray signal can be mainly explaned by the increase of dark current causing large shot-noise.