Study of Radiation Damage on Electronic Parts for High Energy Physics

高能物理电子器件辐射损伤研究

• 批准号: 60540183
• 负责人: OHSUGI Takashi
• 金额: $ 1.28万
• 依托单位: HIROSHIMA UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1985
• 资助国家: 日本
• 起止时间: 1985 至 1986
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-60540183/
• 关键词: radiation-damage; tatal dose dependence of dark current; radiation damage of SSD; ラディエイションダメジ; SSD

Radiation damage on electronic parts will be one of the most serious problems for a high energy experiment of the next generation machine such as the Superconducting Super Collider and the Large Hadron Collider. We, therefore, must study systematically the radiation damage of semiconductor devices which are the most important parts of detector electronics or even particle detector itself may be made by semiconductor. At start of the systematic study, we picked up a silicon strip detector (SSD) based on a pn junction-diode produced by planer-process which is the basic stracture of every kind of microelectronics.Six different type of the SSD was tested. They have all different junction and insulation structure; different size of pn junction and insulation between junctions, different thickness of Si <O_2> insulator, and different type of semiconductor-base.Extracted-proton-beam of 12GeV PS bombarded on these samples at KEK Instantaneous intensity of the beam was about <10^(11)> protons/s for 7mm (FWHM) diameter. Total dose irradiated at the center of the beam was measured to be 2 X <10^(14)> protons/ <cm^2> . An amount of the radiation damage has been evaluated by measurement of a dark-current which is generated at radiation defects. Also signals of <^(241)Am> <gamma> ray and penetrating <beta> ray has been observed for the irradiated SSD and comapred with signals from new one.No sizable difference in the increase of dark current has been observed between six samples having different junction-insulator structure. Pulse-height degradation for <gamma> ray and <beta> ray signals hasbeen observed. It amounts to 10% degradation for total dose of 5x <10^4> Gy. Degradation of energy resolution for <gamma> ray signal can be mainly explaned by the increase of dark current causing large shot-noise.

电子器件的辐射损伤将是超导超级对撞机和大型强子对撞机等下一代高能实验中最严重的问题之一。因此，我们必须系统地研究半导体器件的辐射损伤，因为半导体器件是探测器电子学的重要组成部分，甚至粒子探测器本身也可能是由半导体制成的。在系统研究的开始，我们选取了各种微电子学的基本结构&平面工艺生产的pn结二极管硅条探测器（SSD），对六种不同的SSD进行了测试。它们具有不同的结和绝缘结构、不同的pn结尺寸和结间绝缘、不同的Si绝缘层厚度和不同的磁控管基区类型.在KEK条件下，12GeV PS的引出质子束轰击这些样品，束流的瞬时强度约为&lt;10 ^（11）&gt;质子/s，束径为7 mm（FWHM）.<O_2>在射束中心照射的总剂量测量为2 × 10 ^（14）&gt;质子/cm ^2。通过测量在辐射缺陷处产生的暗电流来评估辐射损伤的量。在辐照后的SSD中还观察到了~（241）Am和穿透射线的信号，并与新SSD的信号进行了比较，发现不同结绝缘体结构的六个样品之间暗电流的增加没有明显的差别。<gamma><beta>射线和射线信号的脉冲高度退化已被观察到。<gamma><beta>对于5x &lt;10^4&gt;戈伊的总剂量，它相当于10%的降解。射线信号能量分辨率的下降主要是由暗电流的增加引起的散粒噪声引起的。<gamma>